Patents by Inventor Jong Lam Lee
Jong Lam Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336711Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed below the first semiconductor layer and doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first intermediate layer disposed on the first semiconductor layer, and including a metal, and an electrode layer disposed on the first intermediate layer. Light from the light-emitting layer transmits through the first semiconductor layer, the first intermediate layer, and the electrode layer at a transmittance equal to or greater than about 70%.Type: ApplicationFiled: March 15, 2022Publication date: October 20, 2022Applicants: Samsung Display Co., LTD., POSTECH Research and Business Development FoundationInventors: Se Young KIM, Jong Lam LEE, Won Seok CHO, Dong Uk KIM, Jae Yong PARK, Chul Jong YOO
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Patent number: 10599000Abstract: The present disclosure provides a smart window including a first base layer and a second base layer positioned to face each other; a first conductive layer and a second conductive layer respectively positioned at inner surfaces of the first base layer and the second base layer; and an electrolyte layer interposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a plurality of first nanostructures, and the second conductive layer includes a plurality of second nanostructures having a different average length from the plurality of first nanostructures.Type: GrantFiled: February 16, 2017Date of Patent: March 24, 2020Assignee: Samsung Display Co., Ltd.Inventors: Sang Hwan Cho, Jong Lam Lee, Chung Sock Choi, So Young Lee, Sun Young Jung, Illhwan Lee, Ki Ryong Jeong
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Patent number: 10600933Abstract: A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based seType: GrantFiled: September 11, 2019Date of Patent: March 24, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Publication number: 20200006593Abstract: A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based seType: ApplicationFiled: September 11, 2019Publication date: January 2, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 10461217Abstract: A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surfType: GrantFiled: February 5, 2019Date of Patent: October 29, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-Kwon Jeong, Myung Cheol Yoo
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Patent number: 10453993Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.Type: GrantFiled: April 17, 2019Date of Patent: October 22, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Publication number: 20190312177Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.Type: ApplicationFiled: April 17, 2019Publication date: October 10, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 10340309Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: February 18, 2018Date of Patent: July 2, 2019Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20190172974Abstract: A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surfType: ApplicationFiled: February 5, 2019Publication date: June 6, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 10243101Abstract: A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaceType: GrantFiled: December 4, 2017Date of Patent: March 26, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Publication number: 20180175105Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: ApplicationFiled: February 18, 2018Publication date: June 21, 2018Inventors: Jong Lam LEE, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20180158986Abstract: A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaceType: ApplicationFiled: December 4, 2017Publication date: June 7, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 9929208Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: March 16, 2017Date of Patent: March 27, 2018Assignee: Seoul Vlosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 9882084Abstract: A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically conneType: GrantFiled: September 9, 2016Date of Patent: January 30, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Publication number: 20170371220Abstract: The present disclosure provides a smart window including a first base layer and a second base layer positioned to face each other; a first conductive layer and a second conductive layer respectively positioned at inner surfaces of the first base layer and the second base layer; and an electrolyte layer interposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a plurality of first nanostructures, and the second conductive layer includes a plurality of second nanostructures having a different average length from the plurality of first nanostructures.Type: ApplicationFiled: February 16, 2017Publication date: December 28, 2017Inventors: Sang Hwan CHO, Jong Lam LEE, Chung Sock CHOI, So Young LEE, Sun Young JUNG, Illhwan LEE, Ki Ryong JEONG
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Publication number: 20170186810Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: ApplicationFiled: March 16, 2017Publication date: June 29, 2017Inventors: JONG LAM LEE, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 9627435Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: December 3, 2015Date of Patent: April 18, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20160380151Abstract: A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically conneType: ApplicationFiled: September 9, 2016Publication date: December 29, 2016Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Publication number: 20160372634Abstract: A light-emitting diode having outstanding light-extraction efficiency and its production method are disclosed. A method is provided wherein a nanostructure is coated uniformly over a wide surface area by means of spherical nanostructure transfer and wherein a light-emitting diode is produced in which the light-extraction efficiency is maximized by means of the coating.Type: ApplicationFiled: February 6, 2015Publication date: December 22, 2016Inventors: Chul-Jong YOO, Jong Lam LEE
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Patent number: 9472727Abstract: A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface.Type: GrantFiled: November 24, 2015Date of Patent: October 18, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo