Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: The present invention provides a pocket fabric, including at least one tubular pocket, where each tubular pocket includes: a tubular sidewall formed between two ends of the tubular pocket; at least two filling chambers formed between the two ends and surrounded by the tubular sidewall; and at least one mesh barrier layer provided between two filling chambers and substantially perpendicular to the tubular sidewall, wherein the filling chambers are communicated with each other. The mesh barrier layer allows fluffy filler to be maintained in the filling chamber and substantially prevents it from moving to adjacent filling chambers, so that the filler cannot accumulate in one place due to gravity or other external forces. Therefore, the pocket fabric of the present invention can maintain the desired warmth retention property after a period of use with filler evenly distributed inside.

Abstract: The present invention provides a conductive fabric comprising base cloth and a conductive metallic circuit structure formed on the surface of the base cloth. The conductive metallic circuit structure comprises at least one metallic seed layer and at least one chemical-plating layer. The metallic seed layer is an evaporation-deposition layer or a sputter-deposition layer and has a circuit pattern. The chemical-plating layer is applied over the surface of the metallic seed layer. The conductive fabric has improved conductivity and heat generation efficiency.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: The present invention provides a conductive fabric comprising base cloth and a conductive metallic circuit structure formed on the surface of the base cloth. The conductive metallic circuit structure comprises at least one metallic seed layer and at least one chemical-plating layer. The metallic seed layer is an evaporation-deposition layer or a sputter-deposition layer and has a circuit pattern. The chemical-plating layer is applied over the surface of the metallic seed layer. The conductive fabric has improved conductivity and heat generation efficiency.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

Abstract: A sandwich fabric with multi-layered pockets is provided. The sandwich fabric comprises at least one first outer layer, at least one second outer layer, at least one interlayer positioned between the first outer layer and the second outer layer, at least one first sandwiched yarn positioned between its adjacent first outer layer and interlayer, and at least one second sandwiched yarn positioned between its adjacent second outer layer and interlayer, in which multiple pockets are formed by joining each interlayer with its adjacent layer, wherein joints of the first outer layer and the interlayer are adjacent to a pocket formed by the interlayer joining with a non-first outer layer; and joints of the second outer layer joining with an interlayer are adjacent to pockets formed of the interlayer joining with a non-second outer layer. Each of the sandwiched yarns consists of warp yarn, weft yarn or both warp yarn and weft yarn.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.