Patents by Inventor Jong Liu
Jong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11950771Abstract: The present invention provides a supporting hook structure, comprising a sleeve, a fixing rod, a first limit unit, a hook and a fixing device. The fixing rod is connected to the side surface of the sleeve. The hook body is connected to one end of the sleeve. The first limit unit is arranged on the side surface of the sleeve and adjacent to the hook body. The first limit unit makes the hook body rotates with the axis direction of the sleeve as a rotation axis. The fixing device is connected to the other end of the sleeve to fix the rotating position of the hook body. Through the above, the hook part enters the proximal thigh from a surgical entrance and the hook part rotates to make the hook part abut against the proximal femur to complete the positioning and fixation of the femur hook structure to the femur.Type: GrantFiled: August 16, 2021Date of Patent: April 9, 2024Assignee: UNITED ORTHOPEDIC CORPORATIONInventors: Yan-Shen Lin, Jiann-Jong Liau, Yu-Liang Liu, Teh-Yang Lin, Wen-Chuan Chen
-
Patent number: 11940804Abstract: The present disclosure is directed to a computer system and techniques for automatically annotating objects in map data used for navigating an autonomous vehicle. Generally, the computer system is configured to obtain LiDAR data points for an environment around an autonomous vehicle, project the LiDAR data points onto image data, detect a target object in the image data, extract a subset of the LiDAR data points that corresponds to the detected target object, register the detected target object in map data if the extracted subset of the LiDAR data points satisfies registration criteria, and navigate the autonomous vehicle in the environment according to the map data.Type: GrantFiled: December 9, 2020Date of Patent: March 26, 2024Assignee: Motional AD LLCInventors: Zhongtao Liu, James Esper, Jong Ho Lee
-
Publication number: 20230097129Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.Type: ApplicationFiled: December 1, 2022Publication date: March 30, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
-
Publication number: 20230066203Abstract: The present invention provides a pocket fabric, including at least one tubular pocket, where each tubular pocket includes: a tubular sidewall formed between two ends of the tubular pocket; at least two filling chambers formed between the two ends and surrounded by the tubular sidewall; and at least one mesh barrier layer provided between two filling chambers and substantially perpendicular to the tubular sidewall, wherein the filling chambers are communicated with each other. The mesh barrier layer allows fluffy filler to be maintained in the filling chamber and substantially prevents it from moving to adjacent filling chambers, so that the filler cannot accumulate in one place due to gravity or other external forces. Therefore, the pocket fabric of the present invention can maintain the desired warmth retention property after a period of use with filler evenly distributed inside.Type: ApplicationFiled: August 24, 2022Publication date: March 2, 2023Inventors: Fang-Jong LIU, Ling Li LIN, Chia-Hao LIN
-
Patent number: 11546974Abstract: The present invention provides a conductive fabric comprising base cloth and a conductive metallic circuit structure formed on the surface of the base cloth. The conductive metallic circuit structure comprises at least one metallic seed layer and at least one chemical-plating layer. The metallic seed layer is an evaporation-deposition layer or a sputter-deposition layer and has a circuit pattern. The chemical-plating layer is applied over the surface of the metallic seed layer. The conductive fabric has improved conductivity and heat generation efficiency.Type: GrantFiled: October 16, 2020Date of Patent: January 3, 2023Assignee: FORMOSA TAFFETA CO., LTD.Inventors: Fang-Jong Liu, Hsing-Nan Chung, Meng-Yueh Wu
-
Patent number: 11545560Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.Type: GrantFiled: January 28, 2021Date of Patent: January 3, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
-
Patent number: 11372531Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.Type: GrantFiled: January 7, 2020Date of Patent: June 28, 2022Assignee: ROKU, INC.Inventors: Steve Shaw-Jong Liu, James Harold Shaw, Anita Ranganath, Gregory S. Gates, Michael Chin-Ming Fu, Matthew Wee, Kevin Ralph Cooper, Charles L. Smith, Harold Sun
-
Publication number: 20210151580Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.Type: ApplicationFiled: January 28, 2021Publication date: May 20, 2021Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
-
Publication number: 20210120634Abstract: The present invention provides a conductive fabric comprising base cloth and a conductive metallic circuit structure formed on the surface of the base cloth. The conductive metallic circuit structure comprises at least one metallic seed layer and at least one chemical-plating layer. The metallic seed layer is an evaporation-deposition layer or a sputter-deposition layer and has a circuit pattern. The chemical-plating layer is applied over the surface of the metallic seed layer. The conductive fabric has improved conductivity and heat generation efficiency.Type: ApplicationFiled: October 16, 2020Publication date: April 22, 2021Inventors: Fang-Jong Liu, Hsing-Nan Chung, Meng-Yueh Wu
-
Patent number: 10943991Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.Type: GrantFiled: March 6, 2019Date of Patent: March 9, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
-
Publication number: 20210053315Abstract: A sandwich fabric with multi-layered pockets is provided. The sandwich fabric comprises at least one first outer layer, at least one second outer layer, at least one interlayer positioned between the first outer layer and the second outer layer, at least one first sandwiched yarn positioned between its adjacent first outer layer and interlayer, and at least one second sandwiched yarn positioned between its adjacent second outer layer and interlayer, in which multiple pockets are formed by joining each interlayer with its adjacent layer, wherein joints of the first outer layer and the interlayer are adjacent to a pocket formed by the interlayer joining with a non-first outer layer; and joints of the second outer layer joining with an interlayer are adjacent to pockets formed of the interlayer joining with a non-second outer layer. Each of the sandwiched yarns consists of warp yarn, weft yarn or both warp yarn and weft yarn.Type: ApplicationFiled: August 18, 2020Publication date: February 25, 2021Inventors: Ling Li LIN, Chia-Hao LIN, Fang-Jong LIU
-
Patent number: 10930517Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: GrantFiled: August 6, 2019Date of Patent: February 23, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
-
Publication number: 20200249827Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.Type: ApplicationFiled: January 7, 2020Publication date: August 6, 2020Inventors: Steve Shaw-Jong LIU, James Harold SHAW, Anita RANGANATH, Gregory S. GATES, Michael Chin-Ming FU, Matthew WEE, Kevin Ralph COOPER, Charles L. SMITH, Harold SUN
-
Publication number: 20200243664Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.Type: ApplicationFiled: March 6, 2019Publication date: July 30, 2020Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
-
Patent number: 10529856Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.Type: GrantFiled: July 5, 2018Date of Patent: January 7, 2020Assignee: United Microelectronics Corp.Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen
-
Patent number: 10528241Abstract: System, method, and computer product embodiments for controlling a display device's display settings from a computing device's touch-based user interface are described. In an embodiment, the computing device establishes a wireless connectivity with the display device. The computing device sends a command generated to query information related to the display setting. Then, the computing device receives the queried information from the display device. The computing device configures a graphical user interface (GUI) with the queried information to display configurations of the display settings on the touchscreen. The configurations include the display settings currently configured in the display device. The computing device further enables, within GUI, a displayed configuration from the display configurations to be calibrated by one or more touch gestures on the touchscreen.Type: GrantFiled: March 21, 2016Date of Patent: January 7, 2020Assignee: ROKU, INC.Inventors: Steve Shaw-Jong Liu, James Harold Shaw, Anita Ranganath, Gregory S. Gates, Michael Chin-Ming Fu, Matthew Wee, Kevin Ralph Cooper, Charles L. Smith, Harold Sun
-
Publication number: 20190362981Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: ApplicationFiled: August 6, 2019Publication date: November 28, 2019Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
-
Patent number: 10418251Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: GrantFiled: August 29, 2017Date of Patent: September 17, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
-
Publication number: 20180331223Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.Type: ApplicationFiled: July 5, 2018Publication date: November 15, 2018Applicant: United Microelectronics Corp.Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen
-
Patent number: 10050146Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.Type: GrantFiled: August 18, 2014Date of Patent: August 14, 2018Assignee: United Microelectronics Corp.Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen