Abstract: A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.

Abstract: An extended reality-based fire training method includes: (a) acquiring each object in a real space acquired through a stereo camera and depth information on each object; (b) reconstructing each object into a 3D mesh object based on each object and the depth information on each object; (c) simulating a virtual fire suppression training augmented reality environment after generating a virtual fire in at least one of the reconstructed 3D mesh objects, and transmitting the simulated virtual fire suppression training augmented reality environment to a head-mounted display device; and (d) operating a virtual fire extinguisher object in a virtual fire suppression training augmented reality environment according to a user manipulation of a real fire extinguisher, and extinguishing a virtual fire object by firing a virtual powder object toward the virtual fire object according to the operation of the virtual fire extinguisher object.

Abstract: A method of manufacturing a multilayer electronic component includes cutting a stack, in which internal electrode patterns and ceramic green sheets are alternately stacked in a stacking direction, to obtain unit chips and attaching a portion of a ceramic green sheet for a side margin portion to the unit chips in a direction, different from the stacking direction. The attaching includes attaching the portion of the ceramic green sheet to the unit chips by compression between a first elastic body on which the ceramic green sheet is disposed and the unit chips. The first elastic body includes a first elastic layer having and a second elastic layer having an elastic modulus different from the first elastic layer, and disposed between the unit chips and the first elastic layer. An elastic modulus of the first elastic body is greater than 50 MPa and less than or equal to 1000 MPa.

Abstract: An apparatus for creating a virtual world includes a processor and a memory connected to the processor, in which the memory stores program instructions executed by the processor so as to receive an image of a real space through a device having a stereo camera, collect mesh data for the real space and an object existing in the real space through the image, determine coordinates for first edges of the real space from the mesh data for the real space, select one of a plurality of second edges based on an area of a virtual space defined by each of the plurality of second edges facing a predetermined direction, when there are more first edges of the real space than edges of a polygon preset for the real space, and output a virtual space defined by some of the first edges and the selected one second edge and a virtual object corresponding to the real object recognized in the real space.

Abstract: A method of manufacturing a multilayer electronic component includes forming a stack by stacking a plurality of ceramic green sheets on which conductive patterns are disposed on a support film, cutting the stack in a second direction, perpendicular to a first direction which is a stacking direction of the plurality of ceramic green sheets, cutting the stack in a third direction, perpendicular to the first and second directions, to obtain a plurality of unit chips, separating the unit chip from the support film, arranging the unit chip such that one of side surfaces of the unit chip is in contact with an adhesive tape, and attaching another one of the side surfaces to a ceramic green sheet for a side margin portion, and forming a side margin portion on the another one of side surfaces.

Abstract: A noise filtering circuit including: an amplifier which receives a reference bias through a first input terminal, generates an amplified output voltage and outputs the amplified output voltage through an output terminal, and receives an output voltage generated on the basis of the amplified output voltage through a second input terminal; a resistance component connected between the output terminal of the amplifier and the second input terminal; and a capacitor connected to the resistance component.

Abstract: The disclosure relates to a method of training an artificial neural network so that a first artificial neural network is trained based on a plurality of training data including a first feature and a second feature that has a correlation with the first feature and depends on the first feature.

Abstract: A noise filtering circuit including: an amplifier which receives a reference bias through a first input terminal, generates an amplified output voltage and outputs the amplified output voltage through an output terminal, and receives an output voltage generated on the basis of the amplified output voltage through a second input terminal; a resistance component connected between the output terminal of the amplifier and the second input terminal; and a capacitor connected to the resistance component.

Abstract: A variable feedback gain delta modulator includes group of capacitors commonly connected to a first terminal and are respectively classified into a first capacitor group and a second capacitor group; a comparator for sequentially generating n-bit digital output signals based on a voltage of the first terminal; and a switch group including switches respectively connected to the capacitors, wherein the switches are respectively classified into a first switch group and a second switch group respectively connected to the first capacitor group and the second capacitor group, and the first switch group and the second switch group respectively operate according to a first control signal and a second control signal that are determined based on the n-bit digital output signals and the variable feedback gain.

Abstract: Provided are a semiconductor device and an operating method thereof. The semiconductor device includes a mode controller configured to output a first control signal in a first communication mode, and output a second control signal in a second communication mode which is different from the first communication mode; and a configurable circuit configured to generate a first output signal to be transmitted to a first type analog-to-digital converter (ADC) in the first communication mode, and generate a second output signal using a second type ADC in the second communication mode, wherein the configurable circuit comprises a switching circuit configured to change a circuit configuration to a first circuit configuration for generating a first output signal in the first communication mode or to a second circuit configuration for generating a second output signal in the second communication mode, depending on the first control signal or the second control signal received from the mode controller.

Abstract: A variable feedback gain delta modulator includes group of capacitors commonly connected to a first terminal and are respectively classified into a first capacitor group and a second capacitor group; a comparator for sequentially generating n-bit digital output signals based on a voltage of the first terminal; and a switch group including switches respectively connected to the capacitors, wherein the switches are respectively classified into a first switch group and a second switch group respectively connected to the first capacitor group and the second capacitor group, and the first switch group and the second switch group respectively operate according to a first control signal and a second control signal that are determined based on the n-bit digital output signals and the variable feedback gain.

Abstract: A variable feedback gain delta modulator includes group of capacitors commonly connected to a first terminal and are respectively classified into a first capacitor group and a second capacitor group; a comparator for sequentially generating n-bit digital output signals based on a voltage of the first terminal; and a switch group including switches respectively connected to the capacitors, wherein the switches are respectively classified into a first switch group and a second switch group respectively connected to the first capacitor group and the second capacitor group, and the first switch group and the second switch group respectively operate according to a first control signal and a second control signal that are determined based on the n-bit digital output signals and the variable feedback gain.

Abstract: A variable feedback gain delta modulator includes group of capacitors commonly connected to a first terminal and are respectively classified into a first capacitor group and a second capacitor group; a comparator for sequentially generating n-bit digital output signals based on a voltage of the first terminal; and a switch group including switches respectively connected to the capacitors, wherein the switches are respectively classified into a first switch group and a second switch group respectively connected to the first capacitor group and the second capacitor group, and the first switch group and the second switch group respectively operate according to a first control signal and a second control signal that are determined based on the n-bit digital output signals and the variable feedback gain.

Abstract: Provided is a reconfigurable amplifier. The reconfigurable amplifier includes a gain circuit including a gain path configured to amplify an input signal, and a feed forward circuit including a feed forward path configured to receive the input signal and perform feed forward compensation on the input signal, and a first control circuit configured to perform the feed forward compensation in a first mode by activating the feed forward path, and deactivate the feed forward path in a second mode different from the first mode.

Abstract: Provided are a semiconductor device and an operating method thereof. The semiconductor device includes a mode controller configured to output a first control signal in a first communication mode, and output a second control signal in a second communication mode which is different from the first communication mode; and a configurable circuit configured to generate a first output signal to be transmitted to a first type analog-to-digital converter (ADC) in the first communication mode, and generate a second output signal using a second type ADC in the second communication mode, wherein the configurable circuit comprises a switching circuit configured to change a circuit configuration to a first circuit configuration for generating a first output signal in the first communication mode or to a second circuit configuration for generating a second output signal in the second communication mode, depending on the first control signal or the second control signal received from the mode controller.

Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.

Abstract: Provided is a reconfigurable amplifier. The reconfigurable amplifier includes a gain circuit including a gain path configured to amplify an input signal, and a feed forward circuit including a feed forward path configured to receive the input signal and perform feed forward compensation on the input signal, and a first control circuit configured to perform the feed forward compensation in a first mode by activating the feed forward path, and deactivate the feed forward path in a second mode different from the first mode.

Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.