Abstract: According to an exemplary embodiment of the present invention, a roll press apparatus is provided. The roll press apparatus presses electrode sheets, each including a both-side coated portion where an electrode mixture is applied to both sides of a current collector and a one-side coated portion where the electrode mixture is applied to one side of a current collector, by passing the electrode sheet through a separated space between a pair of press rolls.

Abstract: According to an exemplary embodiment of the present invention, a roll press apparatus is provided. The roll press apparatus presses electrode sheets, each including a both-side coated portion where an electrode mixture is applied to both sides of a current collector and a one-side coated portion where the electrode mixture is applied to one side of a current collector, by passing the electrode sheet through a separated space between a pair of press rolls.

Abstract: A memory system includes a memory controller and a memory device. The memory controller determines and provides a hammer address. The hammer address is an address that has an activation number or frequency greater than a predetermined threshold. The memory device generates a hammer refresh signal representing a timing for a hammer refresh operation to refresh a first row of the memory device that is physically adjacent to a second row of the memory device corresponding to the hammer address. The memory device performs the hammer refresh operation using the hammer address provided from the memory controller and the hammer refresh signal generated by the memory device.

Abstract: A memory system includes a memory controller and a memory device. The memory controller determines and provides a hammer address. The hammer address is an address that has an activation number or frequency greater than a predetermined threshold. The memory device generates a hammer refresh signal representing a timing for a hammer refresh operation to refresh a first row of the memory device that is physically adjacent to a second row of the memory device corresponding to the hammer address. The memory device performs the hammer refresh operation using the hammer address provided from the memory controller and the hammer refresh signal generated by the memory device.

Abstract: Disclosed is a semiconductor memory device. The semiconductor memory device includes a memory cell array including a plurality of pages each storing data, a decoder configured to decode an address and a command, and a control circuit configured to allow a part or all of a selected page to be opened according to page size selection information which is applied in an active operating mode where the selected page of the plurality of pages is opened.

Abstract: A memory device includes a plurality of banks, a first generator generating standby current in response to a standby signal, and a switching circuit supplying the standby current to at least one of the plurality of banks in response to a plurality of active signals.

Abstract: A memory device includes a plurality of banks, a first generator generating standby current in response to a standby signal, and a switching circuit supplying the standby current to at least one of the plurality of banks in response to a plurality of active signals.