Patents by Inventor Jong-Min Cho
Jong-Min Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11944797Abstract: A device for adjusting the tightening angle of a needle safety protector is proposed. The device is configured to provide an injection needle in an integrated state with a needle hub for preventing reuse of the injection needle and to fasten the needle hub to a needle safety protector that is disposed of in a folded state after use, a fastening structure is improved such that rotation is possible by a predetermined angle when the needle safety protector is rotated. Accordingly, an injection is safely performed by correcting the injection needle to the reference direction. In addition, even when a syringe is assembled by deviating from a reference angle during the mass production with the automatic line, the wrong angle is corrected in use.Type: GrantFiled: March 5, 2021Date of Patent: April 2, 2024Inventors: Hee Min Cho, Mi Heui Cho, Jong Deok Yun, Jae Cheon Kim
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Publication number: 20240103362Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.Type: ApplicationFiled: September 19, 2023Publication date: March 28, 2024Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jong Min KIM, Seung Yong LEE, So Hye CHO, Ho Seong JANG, Jae Won CHOI, Chang Kyu HWANG
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Publication number: 20240102921Abstract: An optical inspection apparatus includes a stage that supports a target substrate, the target substrate including a plurality of light emitting elements, a jig that applies an electrical signal to the target substrate, the jig including a regulation resistor, a microscope that generates magnified image data of the target substrate, a camera that captures the magnified image data to generate a color image of the target substrate, and an optical measurement unit that captures the magnified image data of the target substrate to generate a spectrum image and measure optical characteristics of the target substrate.Type: ApplicationFiled: December 7, 2023Publication date: March 28, 2024Applicant: Samsung Display Co., LTD.Inventors: Je Won YOO, Basrur VEIDHES, Dae Hyun KIM, Hyun Min CHO, Jong Won LEE, Joo Yeol LEE
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Publication number: 20240098390Abstract: The present disclosure provides a mobile communications system line number sheet management device and method. Provided, according to one aspect of the present disclosure, is a line number sheet management device and method, for automating access network-related line number sheet management by automatically collecting and updating line number information, the line number information being collected from a mobile communications base station management server (mobile communications system management server) and a fronthaul management server. Provided, according to another aspect of the present disclosure, is a fronthaul device for: acquiring unique information of a base station by receiving an optical signal from any one of a radio unit (RU) and a digital unit (DU); and transmitting the unique information of the base station to a fronthaul management server.Type: ApplicationFiled: November 26, 2020Publication date: March 21, 2024Inventors: Sun Ik LEE, Ka Yoon KIM, Jin Wook LEE, Sang Woo KIM, Jong Min LEE, Myung Hun SONG, Beum Geun CHO
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Publication number: 20240097083Abstract: A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Hyun Deok IM, Jong Hyuk KANG, Dae Hyun KIM, Joo Yeol LEE, Hyun Min CHO
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Publication number: 20240091759Abstract: Disclosed herein is a method of depositing a transition metal single-atom catalyst including preparing a carbon carrier, and depositing a transition metal single-atom catalyst on the carbon carrier, in which the carbon carrier is surface-treated by an oxidation process, and wherein the deposition is carried out by an arc plasma process.Type: ApplicationFiled: September 15, 2023Publication date: March 21, 2024Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jong Min KIM, Sang Hoon KIM, Chang Kyu HWANG, Seung Yong LEE, So Hye CHO, Jae Won CHOI
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Publication number: 20240046992Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.Type: ApplicationFiled: October 6, 2023Publication date: February 8, 2024Applicant: KEY FOUNDRY CO., LTD.Inventors: Seong Jun PARK, Jong Min CHO, Sung Bum PARK, Kee Sik AHN
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Patent number: 11854622Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.Type: GrantFiled: November 30, 2021Date of Patent: December 26, 2023Assignee: KEY FOUNDRY CO., LTD.Inventors: Seong Jun Park, Jong Min Cho, Sung Bum Park, Kee Sik Ahn
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Publication number: 20230107619Abstract: A non-volatile memory device includes a first fuse cell array and a second fuse cell array, spaced from each other; a first ground ring region and a second ground ring region disposed to surround the first fuse cell array and the second fuse cell array, respectively; a third ground ring region configured to connect the first ground ring region and the second ground ring region; a power ring region disposed to surround the first ground ring region and the second ground ring region; and an address decoder, disposed between the first fuse cell array and the second fuse cell array, configured to supply a word line signal to each of the first fuse cell array and the second fuse cell array. The ground ring regions supply a ground voltage to each of the first fuse cell array and the second fuse cell array.Type: ApplicationFiled: March 14, 2022Publication date: April 6, 2023Applicant: KEY FOUNDRY CO., LTD.Inventors: Seong Jun PARK, Jong Min CHO, Sung Bum PARK, Kee Sik AHN
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Publication number: 20230048824Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.Type: ApplicationFiled: November 30, 2021Publication date: February 16, 2023Applicant: KEY FOUNDRY CO., LTD.Inventors: Seong Jun PARK, Jong Min CHO, Sung Bum PARK, Kee Sik AHN
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Patent number: 11538541Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: GrantFiled: March 14, 2022Date of Patent: December 27, 2022Assignee: KEY FOUNDRY CO., LTD.Inventors: Jong Min Cho, Sung Bum Park, Kee Sik Ahn, Seong Jun Park
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Publication number: 20220199177Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: ApplicationFiled: March 14, 2022Publication date: June 23, 2022Applicant: KEY FOUNDRY CO., LTD.Inventors: Jong Min CHO, Sung Bum PARK, Kee Sik AHN, Seong Jun PARK
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Patent number: 11328783Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: GrantFiled: April 22, 2021Date of Patent: May 10, 2022Assignee: KEY FOUNDRY CO., LTD.Inventors: Jong Min Cho, Sung Bum Park, Kee Sik Ahn, Seong Jun Park
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Patent number: 11145379Abstract: An eFuse cell array includes a first unit cell and a second unit cell, each including a PN diode, a cell read transistor, and a fuse element. A first placement order of the PN diode, the cell read transistor, and the fuse element in the first unit cell is reversed with respect to a second placement order of the PN diode, the cell read transistor, and the fuse element in the second unit cell.Type: GrantFiled: August 14, 2020Date of Patent: October 12, 2021Assignee: Key Foundry Co., Ltd.Inventors: Jong Min Cho, Sung Bum Park, Kee Sik Ahn, Seong Jun Park
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Publication number: 20210241841Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: ApplicationFiled: April 22, 2021Publication date: August 5, 2021Applicant: KEY FOUNDRY CO., LTD.Inventors: Jong Min CHO, Sung Bum PARK, Kee Sik AHN, Seong Jun PARK
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Patent number: 11024398Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: GrantFiled: April 15, 2020Date of Patent: June 1, 2021Assignee: KEY FOUNDRY CO., LTD.Inventors: Jong Min Cho, Sung Bum Park, Kee Sik Ahn, Seong Jun Park
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Publication number: 20210125678Abstract: An eFuse cell array includes a first unit cell and a second unit cell, each including a PN diode, a cell read transistor, and a fuse element. A first placement order of the PN diode, the cell read transistor, and the fuse element in the first unit cell is reversed with respect to a second placement order of the PN diode, the cell read transistor, and the fuse element in the second unit cell.Type: ApplicationFiled: August 14, 2020Publication date: April 29, 2021Applicant: KEY FOUNDRY CO., LTD.Inventors: Jong Min CHO, Sung Bum PARK, Kee Sik AHN, Seong Jun PARK
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Publication number: 20210125677Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.Type: ApplicationFiled: April 15, 2020Publication date: April 29, 2021Applicant: KEY FOUNDRY CO., LTD.Inventors: Jong Min CHO, Sung Bum PARK, Kee Sik AHN, Seong Jun PARK
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Patent number: 6252746Abstract: Disclosed is an actuator of a hard disk drive. The actuator comprises a bobbin having an outside bobbin part made of plastic, an inside bobbin part of a lower height than the outside bobbin part, and a coil intervened between the outside bobbin part and the inside bobbin part by insert molding; a rib portion having a predetermined width and formed along a boundary region between the inside bobbin part and the coil such that it has the same height as the outside bobbin part; and a plurality of connecting portions having a selected width and each being branched from a center portion of the inside bobbin part and linked to a desired position on the rib portion such that it has the same height as the rib portion.Type: GrantFiled: August 11, 1999Date of Patent: June 26, 2001Assignee: SamSung Electronics Co., Ltd.Inventor: Jong-Min Cho