Patents by Inventor Jong Moo Lee

Jong Moo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030215189
    Abstract: The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.
    Type: Application
    Filed: August 6, 2002
    Publication date: November 20, 2003
    Inventors: Jong Moo Lee, Doo Hee Cho, Joon Tae Ahn, Myung Hyun Lee, Kyong Hon Kim
  • Publication number: 20030152702
    Abstract: Disclosed is a method of forming a silica layer for an optical waveguide. The present invention includes the steps of preparing a chamber having a magnetic coil, a gas supply unit, and a support and injecting a reactant gas in the chamber to deposit the silica layer on a substrate mounted on the support by high density plasma chemical vapor deposition. The present invention provides the high deposition ratio of the silica layer since the ionization of the reactant gas proceeds fast due to the high density plasma induced by the magnetic coil. Moreover, the sputtering process by the inert gas and the silica layer depositing process are simultaneously carried out to provide the silica layer with a high deposition ratio and high density, whereby additional annealing is unnecessary as well as the process can be carried out at a low temperature to fabricate various silica-polymer mixed waveguide.
    Type: Application
    Filed: December 19, 2002
    Publication date: August 14, 2003
    Applicant: LG Electronics Inc.
    Inventors: Min Jae Jung, Young Soo Han, Jong Moo Lee, Jae Eun Lee, Young Ho Choe