Abstract: A polarization direction measuring apparatus includes: a first polarizing plate having an unknown polarization direction about a reference axis; a sample whose polarization direction is to be measured; a rotatable sample holder on which the sample is mounted in a first direction and a second direction opposite to the first direction, wherein the sample holder rotates the sample along a reference axis in the azimuth direction; a light source that generates light passing though the first polarizing plate and the sample; and a light detector detecting light generated by the light source that passes though the first polarizing plate and the sample.

Abstract: An organic electro-luminescence display device and a method for fabricating the same are provided. A first substrate and a second substrate are sealed by a sealant. An organic electro-luminescent diode is formed on the first substrate. The sealant contains a frit glass and a light-heat converter. The frit glass can reduce the moisture and oxygen transmission rate by preventing the organic electro-luminescent diode from being thermally decomposed during a curing process. Since the two substrates are encapsulated by the frit glass, the lifetime and reliability of the organic electro-luminescence display device can be increased.

Abstract: Provided is a package having high-density lead wires for an optical transceiver module. The package for an optical transceiver module includes a stem having through holes, a metal mount positioned on an upper surface of the stem, a signal line disposed in the metal mount, and a plurality of lead wires protruding from a lower surface of the stem and electrically connected to an optical device mounted on the metal mount through the through holes. Thus, the lead wires can be connected to both of an upper surface and lower surface of the metal mount, thereby increasing a signal density in the package.

Abstract: Provided is an optical module used in a communication system employing a radio over fiber (ROF) technology delivering a radio frequency (RF) signal through an optical fiber. The optical module includes: an optical device; a signal line for transporting a radio frequency (RF) signal input from an external circuit to the optical device; and a resistor separately disposed from the signal line and having one end connected with the optical device, wherein the input impedance seen from the signal line is matched by the resistor. A bias voltage supplied to operate the optical device is applied through an inductor connected to the signal line between the optical device and a filter. Here, the filter formed by a pattern of the signal line prevents the bias voltage from being supplied to the external circuit. In order to amplify the RF signal input from the external circuit, an amplifier may be connected between the external circuit and the filter.

Abstract: An array substrate of an LCD and a fabricating method thereof are provided. A first insulating layer is formed on the substrate. A TFT and a hardened liquid crystal layer are provided in a pixel region of the substrate. A second insulating layer is formed in the pixel region around the hardened liquid crystal layer such that the second insulating layer and the hardened liquid crystal layer are substantially planar. A first alignment layer is formed between the hardened liquid crystal layer and the first insulating layer. A pixel electrode is formed on the second insulating layer and the hardened liquid crystal layer and contacts a drain region of the TFT through a hole in the first insulating layer. A second alignment layer is formed on the entire substrate over the second insulating layer and the hardened liquid crystal layer.

Abstract: The present invention relates to an optical pickup device having a phase shift mirror, which universally adopts light sources for recording on and/or reproducing from both CDs and DVDs. In the optical pickup device with double light sources for CDs and DVDs, beams can travel the optical path at maximum efficiency (e.g., transmittance for P-polarized beams and reflectance for S-polarized beams) before being incident on the phase shift mirror. Additionally, because it employs a single element PS-MR instead of a mirror and a quarter wave plate, the optical pickup device can be constructed by assembling a smaller number of parts and thus have a low cost.

Abstract: Provided is an optical module including a microstrip line, a traveling wave type optical device positioned in the end of the microstrip line, and at least one balanced open stub connected to the microstrip line for the impedance matching at a specific frequency such as 40 GHz and 60 GHz. For the fine tuning, laser trimming can be applied to the stub. A transition region is formed between the optical device and the microstrip line. A termination resistor is formed to face the microstrip line with the optical device therebetween. A bandwidth can be controlled at a specific frequency by adjusting a number of the stubs or a value of the termination resistor.

Abstract: A liquid crystal display and method of reducing light leakage in a black mode of a liquid crystal display is provided. In the liquid crystal display, a backlight assembly generates light, and a display unit is disposed over the backlight assembly to display an image by using light received from the backlight assembly. A DBEF (dual brightness enhanced film) is attached to a lower polarization plate provided at the display unit. A brightness control plate is interposed between the lower polarization plate and the DBEF to reduce the brightness of an inclined incident light that is not perpendicular to an absorbing axis of the polarization plate.

Abstract: A hologram diffuser for a liquid crystal display wherein a resin layer with a desired thickness is formed on an upper substrate. A hologram pattern is formed in the resin layer using a hologram plate. A smoothing film with a desired thickness is formed on the hologram layer provided with the hologram pattern. Accordingly, it is possible to assure a wide visual angle and realize a high picture quality.

Abstract: Provided is a structure for manufacturing an optical module for fixing optical components needed in modularizing an optical device applied to an optical communication, and contrary to the conventional structure, it is to provide a structure for attaching the optical components that can attach the optical components, such as a coupling lens, a collimator, and a mirror, to the exact place in both directions, and that can locate the lens to the place where the light outputting from the optical device can be precisely adjusted based on light usage, thereby obtaining good optical characteristics.

Abstract: Provided is an optical transceiver for reducing crosstalk, comprising a light signal transmitter, a photoelectric transducer having a light transmitting device that converts the electrical signal into the light signal for transmission and a light receiving device that converts a received light signal into an electrical signal, and an electronic component that is located on a PCB connected to a leadframe or inside the optical transceiver module and amplifies, modulates, and demodulates the electrical signals in receiving and transmitting, whereby it is possible to implant the crosstalk level of less than ?90 dB capable of retaining the reception sensitivity to ?26 dBm in the optical transceiver, by forming the dummy ground lines on the substrate to reduce the crosstalk between the light transmitting device and the receiving device mounted on the silicon substrate.

Abstract: Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.

Abstract: A ferroelectric memory device of an MFIS FET structuring using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

Abstract: A method of forming metal lines such as titanium and aluminum on a semiconductor wafer by sputtering at a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C. This method decreases the contact resistance between the layers while reducing the number of processing steps.

Abstract: A ferroelectric memory device of an MFIS FET structure using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

Abstract: A vacuum sputtering apparatus for forming metal lines on a semiconductor wafer, including an annular reactive gas injector and a silicon carbide chuck for direct uniform heating of the wafer to a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C., thereby allowing the deposition of titanium and titanium nitride layers having uniform thickness and composition.

Abstract: A method for manufacturing an electrode, e.g., a gate electrode of a MOS transistor, and an electrode and MOS transistor manufactured in accordance with this method. The method includes the steps of forming a first diffusion preventing layer on an underlying layer, forming a mask pattern having an opening on the first diffusion preventing layer, forming a metal layer on a portion of the first diffusion preventing layer exposed by the opening in the mask pattern, forming a metal layer on the exposed portion of the first diffusion preventing layer, forming a second diffusion preventing layer on the resultant structure, etching back the second diffusion preventing layer to leave a remaining portion thereof on the metal layer, removing the mask pattern, and forming a third diffusion preventing layer on exposed portions of the remaining portion of the second diffusion preventing layer, exposed sidewalls of the metal layer, and exposed portions of the first diffusion preventing layer.