Abstract: A memory device is provided. A memory device comprises a memory cell array including a wordline, master signal logic configured to generate a first address signal in response to the wordline being selected based on a refresh command or an active command, and to generate a second address signal in response to the wordline being selected based on a precharge command and count logic configured to reset a count value of a count cell connected to the wordline based on a paper signal generated in response to the wordline being selected based on the first address signal and the refresh command, and to read and then update the count value of the count cell based on the second address signal.

Abstract: The present invention relates to a hand motion control system and a control method thereof, and more specifically, to a hand motion control system for a myoelectric hand, and to a control method thereof. The system enables not only grasping motions for grasping an object, but also the expression of hand gestures expressing emotions or intent, based on a limited myoelectric signal transmitted via two myoelectric sensors provided on the myoelectric hand. Furthermore, the system enables a wide variety of hand postures and grasp types that are determined by the position of a thumb, which can be changed by a user, thus easily expanding the range of applications of the myoelectric hand.

Abstract: The present invention relates to a hand motion control system and a control method thereof, and more specifically, to a hand motion control system for a myoelectric hand, and to a control method thereof. The system enables not only grasping motions for grasping an object, but also the expression of hand gestures expressing emotions or intent, by means of a limited myoelectric signal transmitted via two myoelectric sensors provided on the myoelectric hand. Furthermore, the system enables a wide variety of hand postures and grasp types that are determined by the position of a thumb, which can be changed by a user, thus easily expanding the range of applications of the myoelectric hand.

Abstract: A method and a mobile device are adapted to transmit data through short-range communication based on movement of the mobile device. External mobile devices near the mobile device are searched. Location information for each external mobile device found near the mobile device is acquired. Data to be transmitted is set. The movement of the mobile device is recognized. At least one target mobile device is set to receive data, based on the movement of the mobile device and the acquired location information of the found external mobile devices. And the data is transmitted to the at least one target mobile device.

Abstract: A method and a mobile device are adapted to transmit data through short-range communication based on movement of the mobile device. External mobile devices near the mobile device are searched. Location information for each external mobile device found near the mobile device is acquired. Data to be transmitted is set. The movement of the mobile device is recognized. At least one target mobile device is set to receive data, based on the movement of the mobile device and the acquired location information of the found external mobile devices. And the data is transmitted to the at least one target mobile device.

Abstract: The present invention relates to a network interface card controller and method of controlling thereof, capable of supporting several types of protocols. The present invention provides an integrated hardware card which supports an interface of several protocols. Thereby, the structure becomes simple and the cost may be reduced.

Abstract: A dynamic random access memory (DRAM) and a method of manufacturing the same which is suitable for increasing the integration of a semiconductor device and suppressing the generation of a leakage current using a silicon-on-insulator (SOI) structure are disclosed. The semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a semiconductor layer pattern formed on the insulating film, a trench formed in the semiconductor substrate through the semiconductor layer pattern and the insulating film, an electrode of a capacitor formed in the trench for electrically connected to the semiconductor layer pattern, a gate insulating film formed on the semiconductor layer pattern, a gate electrode formed on the gate insulating film, and impurity regions formed in the semiconductor layer pattern.

Abstract: A structure and fabrication method for a thin film transistor suitable for a SRAM memory cell. The thin film transistor structure includes a gate electrode formed to have a groove, a gate insulation film formed on the gate electrode, a semiconductor layer formed in the groove of the gate electrode, and impurity regions formed on opposite sides of the semiconductor layer. The method for fabricating the thin film transistor includes forming a gate electrode and a gate insulation film successively on an insulating substrate so as to have a groove, forming a semiconductor layer on the gate insulation film at a part of the groove, and forming source/drain impurity regions by selective injection of impurity ions into opposite sides of the semiconductor layer.

Abstract: An isolation layer structure of a semiconductor device includes a substrate; a first insulating layer having a predetermined width and thickness which is formed in a predetermined portion of the substrate; and a second insulating layer which is formed in a predetermined portion of the substrate and which surrounds the first insulating layer.

Abstract: A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insulation substrate, a gate electrode formed to have a negative slope at one side thereof on the insulation substrate, an insulation film side wall formed at the other side of the gate electrode, a gate insulation film formed on the insulation substrate, gate electrode and side wall, a semiconductor layer formed on the gate insulation film, impurity diffusion regions selectively formed within the semiconductor layer over the gate electrode, the side wall and the insulation substrate on the other side of the gate electrode, and a channel region formed within the semiconductor layer at the side of the gate electrode having the negative slope.

Abstract: A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.

Abstract: A structure and fabricating method of a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes: an insulation substrate; a gate electrode formed on the insulation substrate; a gate insulation film formed on the gate electrode and on the insulation substrate; a semiconductor layer formed on the gate insulation film; channel regions formed in parts of the semiconductor layer at both sides of the gate electrode; a high density first conductive type first impurity region formed in the semiconductor layer over the gate electrode; and first conductive type second impurity regions of having an LDD structure formed in parts of the semiconductor layer over the insulation substrate except under the gate electrode.