Abstract: A sealing device comprises a first insert body and a second insert body. The first insert body has an annular first frame, and a first sealing part coupled to the first frame. The second insert body has an annular second frame having a diameter smaller than that of the first frame, and a second sealing part coupled to the second frame. The second insert body rotates relative to the first insert body. The first insert body and the second insert body are arranged such that a gap is formed between the first sealing part and the second sealing part. The second sealing part has a first surface facing the first sealing part and spaced apart from the second frame in a first axial direction; and a first baffle protruding toward the first sealing part from the end of the first surface in the outer radial direction thereof.

Abstract: A sealing device comprises a first insert body and a second insert body. The first insert body has an annular first frame, and a first sealing part coupled to the first frame. The second insert body has an annular second frame having a diameter smaller than that of the first frame, and a second sealing part coupled to the second frame. The second insert body rotates relative to the first insert body. The first insert body and the second insert body are arranged such that a gap is formed between the first sealing part and the second sealing part. The second sealing part has a first surface facing the first sealing part and spaced apart from the second frame in a first axial direction; and a first baffle protruding toward the first sealing part from the end of the first surface in the outer radial direction thereof.

Abstract: The present invention relates to a method of preparing high-strength coated whole cottonseed for livestock feed, wherein the germination ability of whole cottonseed is removed using high-temperature and high-pressure steam, and the surface of whole cottonseed is coated with gelatinized starch with high viscosity, which is prepared by gelatinizing starch in a preparation process. According the method of the present invention, since the germination ability of whole cottonseed is removed, release of foreign genes into the domestic environment, which may occur when using whole cottonseed for livestock feed, may be fundamentally prevented, and thus the method of the present invention may contribute to protection of domestic plant genetic resources. In addition, the use of gelatinized starch with increased viscosity, which is prepared by gelatinizing starch in a preparation process, may dramatically increase the selection range of coating agents.

Abstract: The present invention provides a novel method for preparing lacosamide with high chiral purity from D-serine. The method of the present invention can obtain lacosamide with high chiral purity in a high yield through a simple and environmentally-friendly process and thus can be easily applied to mass production.

Abstract: The present invention relates to a method of preparing high-strength coated whole cottonseed for livestock feed, wherein the germination ability of whole cottonseed is removed using high-temperature and high-pressure steam, and the surface of whole cottonseed is coated with gelatinized starch with high viscosity, which is prepared by gelatinizing starch in a preparation process. According the method of the present invention, since the germination ability of whole cottonseed is removed, release of foreign genes into the domestic environment, which may occur when using whole cottonseed for livestock feed, may be fundamentally prevented, and thus the method of the present invention may contribute to protection of domestic plant genetic resources. In addition, the use of gelatinized starch with increased viscosity, which is prepared by gelatinizing starch in a preparation process, may dramatically increase the selection range of coating agents.

Abstract: The present invention provides a novel method for preparing lacosamide with high chiral purity from D-serine. The method of the present invention can obtain lacosamide with high chiral purity in a high yield through a simple and environmentally-friendly process and thus can be easily applied to mass production.

Abstract: A liquid delivery apparatus for the intrathecal delivery of one or more medications to a patient is disclosed. The liquid delivery apparatus generally includes a liquid reservoir, a liquid metering unit fluidly connected to the liquid reservoir, and a catheter delivery tube fluidly connected to the liquid metering unit. Preferably, the liquid delivery apparatus includes two or more liquid reservoirs. In various embodiments, the liquid reservoir includes a deformable balloon and a compressive sleeve spring as a pressure source, the liquid metering unit is a piezoelectrically actuated microvalve, and/or diagnostic sensors are included in the apparatus. The disclosed apparatus are compact, volume-efficient, energy-efficient, capable of delivering accurate fluid volumes, and address problems associated with multi-medication therapies. Methods of operating the liquid delivery apparatus are also disclosed.

Abstract: A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes ar

Abstract: A liquid delivery apparatus for the intrathecal delivery of one or more medications to a patient is disclosed. The liquid delivery apparatus generally includes a liquid reservoir, a liquid metering unit fluidly connected to the liquid reservoir, and a catheter delivery tube fluidly connected to the liquid metering unit. Preferably, the liquid delivery apparatus includes two or more liquid reservoirs. In various embodiments, the liquid reservoir includes a deformable balloon and a compressive sleeve spring as a pressure source, the liquid metering unit is a piezoelectrically actuated microvalve, and/or diagnostic sensors are included in the apparatus. The disclosed apparatus are compact, volume-efficient, energy-efficient, capable of delivering accurate fluid volumes, and address problems associated with multi-medication therapies. Methods of operating the liquid delivery apparatus are also disclosed.

Abstract: A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.

Abstract: A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.

Abstract: A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes ar

Abstract: Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Abstract: Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Abstract: Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible

Abstract: Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Abstract: Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible

Abstract: To form a silicon tip having an undercut, a photoresist pattern having a vertical profile or a positive profile is formed on a silicon substrate and an under-cuted isotropic etching process is then performed using the photoresist pattern as a mask. First and second insulation films are formed on the silicon tip and the silicon substrate except for the silicon tip. The first insulation film is then separated from the second insulation film.

Abstract: A washing machine includes an external cabinet, an outer tub installed inside the external cabinet, a spin basket rotatably installed inside the outer tub and a plurality of suspension units for suspending the outer tub with respect to the external cabinet. Each of the suspension units comprises: a suspension bar for connecting the outer tub to the external cabinet; a main damper combined with one end of the suspension bar; and an auxiliary damper combined with the one end of the suspension bar, adjacent to said main damper. Accordingly, vibrations and noises of the outer tub can be reduced effectively.