Patents by Inventor Jong Mun Kim
Jong Mun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099665Abstract: The embodiments disclosed herein provide an electrocardiogram data processing server, an electrocardiogram data processing method, and a computer program. The embodiments disclosed herein further provide an electrocardiogram data processing server, an electrocardiogram data processing method, and a computer program, the electrocardiogram data processing server configured to determine whether analysis is required while segmenting an electrocardiogram signal into signal segments with variable window sizes, for instance, by changing a window size of a signal segment according to whether analysis of a previous signal segment is required.Type: ApplicationFiled: September 25, 2023Publication date: March 28, 2024Applicant: ATSENS CO., LTD.Inventors: Kab Mun CHA, Tae Youn KIM, Byung Jin MOON, Jong Ook JEONG
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Publication number: 20230389441Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Minrui YU, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. NGAI
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Patent number: 11723283Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: GrantFiled: May 11, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel, Lin Xue, Chando Park, Mahendra Pakala, Chentsau Chris Ying, Huixiong Dai, Christopher S. Ngai
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Patent number: 11384428Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: GrantFiled: June 17, 2020Date of Patent: July 12, 2022Assignee: Applied Materials, Inc.Inventors: Mang-Mang Ling, Thomas Kwon, Jong Mun Kim, Chentsau Chris Ying
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Patent number: 11289342Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.Type: GrantFiled: June 15, 2020Date of Patent: March 29, 2022Assignee: Applied Materials, Inc.Inventors: He Ren, Jong Mun Kim, Maximillian Clemons, Minrui Yu, Mehul Naik, Chentsau Ying
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Publication number: 20210351342Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Inventors: Minrui YUI, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. Ngai
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Patent number: 11145808Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: GrantFiled: November 12, 2019Date of Patent: October 12, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Minrui Yu, Chando Park, Mang-Mang Ling, Jaesoo Ahn, Chentsau Chris Ying, Srinivas D. Nemani, Mahendra Pakala, Ellie Y. Yieh
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Publication number: 20210234091Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.Type: ApplicationFiled: January 24, 2020Publication date: July 29, 2021Applicant: APPLIED Materials, Inc.Inventors: Jong Mun Kim, Mang-Mang Ling, Soham Asrani, Lin Xue, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20210143323Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: ApplicationFiled: November 12, 2019Publication date: May 13, 2021Inventors: Jong Mun KIM, Minrui YU, Chando PARK, Mang-Mang LING, Jaesoo AHN, Chentsau Chris YING, Srinivas D. NEMANI, Mahendra PAKALA, Ellie Y. YIEH
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Patent number: 10964527Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.Type: GrantFiled: May 2, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Biao Liu, Cheng Pan, Erica Chen, Chentsau Ying, Srinivas Nemani, Ellie Yieh
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Patent number: 10957548Abstract: Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.Type: GrantFiled: November 14, 2019Date of Patent: March 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Mang-Mang Ling, Jong Mun Kim, Chentsau Ying
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Publication number: 20210017641Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: ApplicationFiled: June 17, 2020Publication date: January 21, 2021Inventors: Mang-Mang LING, Thomas KWON, Jong Mun KIM, Chentsau Chris YING
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Publication number: 20200350178Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.Type: ApplicationFiled: June 15, 2020Publication date: November 5, 2020Inventors: He Ren, Jong Mun Kim, Maximillian Clemons, Minrui Yu, Mehul Naik, Chentsau Ying
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Patent number: 10692734Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.Type: GrantFiled: October 25, 2018Date of Patent: June 23, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Jong Mun Kim, Chentsau Chris Ying, He Ren, Srinivas D. Nemani, Ellie Yieh
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Patent number: 10685849Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.Type: GrantFiled: May 1, 2019Date of Patent: June 16, 2020Assignee: Applied Materials, Inc.Inventors: He Ren, Jong Mun Kim, Maximillian Clemons, Minrui Yu, Mehul Naik, Chentsau Ying
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Publication number: 20200152470Abstract: Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.Type: ApplicationFiled: November 14, 2019Publication date: May 14, 2020Inventors: MANG-MANG LING, JONG MUN KIM, CHENTSAU YING
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Patent number: 10643854Abstract: Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF6 and/or NF3 typically only suitable for dielectric layers, are energized by pulsed RF to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as HBr or Cl2. In embodiments, a mask open etch and the multi-layered stack etch are performed in a same plasma processing chamber enabling a single chamber, single recipe solution for patterning such multi-layered stacks. In embodiments, 3D NAND memory cells are fabricated with memory plug and/or word line separation etches employing a fluorine-based, pulsed-RF plasma etch.Type: GrantFiled: December 4, 2015Date of Patent: May 5, 2020Assignee: Applied Materials, Inc.Inventors: Daisuke Shimizu, Jong Mun Kim
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Publication number: 20200135492Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.Type: ApplicationFiled: October 25, 2018Publication date: April 30, 2020Inventors: JONG MUN KIM, CHENTSAU CHRIS YING, HE REN, SRINIVAS D. NEMANI, ELLIE YIEH
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Publication number: 20190393024Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.Type: ApplicationFiled: May 2, 2019Publication date: December 26, 2019Inventors: Jong Mun KIM, Biao LIU, Cheng PAN, Erica CHEN, Chentsau YING, Srinivas NEMANI, Ellie YIEH
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Publication number: 20180142354Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.Type: ApplicationFiled: January 19, 2018Publication date: May 24, 2018Inventors: Sergio Fukuda SHOJI, Hamid NOORBAKHSH, Jong Mun KIM, Jason DELLA ROSA, Ajit BALAKRISHNA