Patents by Inventor Jong O. Kim

Jong O. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High breakdown voltage semiconductor device
    Patent number: 5003372
    Abstract: A semiconductor device having a grooved field plate(s), a grooved field limiting ring(s) or a combination of a grooved field plate(s) and grooved field limiting ring(s) is disclosed. The grooved modification of the conventional semiconductor results in an increased break-down voltage over the conventional semiconductor device. A method for manufacturing the grooved semiconductor device is disclosed.
    Type: Grant
    Filed: June 9, 1989
    Date of Patent: March 26, 1991
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jong O. Kim, Jin H. Kim
  • Double diffused MOSFET cell
    Patent number: 4982249
    Abstract: A double diffused MOSFET cell having a particular cell configuration which resembles a circle with a scalloped perimeter is disclosed.
    Type: Grant
    Filed: June 9, 1989
    Date of Patent: January 1, 1991
    Assignee: Hyundai Electronic Industries Co., Ltd.
    Inventors: Jong O. Kim, Jin H. Kim