Abstract: A positive charge pumping circuit which is capable of reducing a sheet resistance and a threshold potential drop. The pumping circuit includes a pumping node, a power supply node, a first diode and at least one pumping stage, The pumping node provides a pumping potential. The supply node provides a power supply potential. An anode of the diode is coupled to the power supply node. The pumping stages are coupled in series between the pumping node and a cathode of the first diode. Each of the pumping stages includes a driving node and a control node, a pumping driving circuit, a transfer control circuit, a charge pumping circuit, and a potential control circuit.

Abstract: The present invention relates to a circuit for repair of flash memory cell and a method of repair and, more particularly, to a circuit for repair of flash memory cell and a method of repair which facilitates the effective repair by supplying external addresses outputted from column address buffer to the column decoder in normal condition and supplying internal addresses generated in the inside at the time of repair by utilizing an address control circuit.