Abstract: Provides is a manufacturing method of a display device including steps of forming a semiconductor on a substrate; applying a doping solution to the semiconductor layer; and doping by heat treating the semiconductor layer to which the doping solution is applied, wherein the doping solution includes a solvent and a dopant, and the dopant contains at least one of triethyl borate, tris(trimethylsilyl)borate, and trimethylboroxine.

Abstract: A display device includes a substrate including an opening, a buffer layer disposed on the substrate, a semiconductor disposed on the buffer layer, a gate electrode overlapping at least a portion of the semiconductor in a plan view, a source electrode and a drain electrode electrically connected to the semiconductor, and a light-emitting device electrically connected to the drain electrode. The opening of the substrate overlaps another portion of the semiconductor in a plan view.

Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

Abstract: A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

Abstract: A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.

Abstract: A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.

Abstract: A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

Abstract: A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer.

Abstract: A method of manufacturing transistor may include forming an active layer on a base substrate, forming a sacrificial layer on the active layer, doping a first dopant ion in the active layer through a first ion implantation process, removing the sacrificial layer, forming a gate insulating layer; and forming a gate electrode on the gate insulating layer.

Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.

Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

Abstract: A laser crystallization apparatus includes a laser generating module configured to generate a laser beam, an optical module configured to guide the laser beam, an annealing chamber comprising a stage on which a target substrate comprising an amorphous thin film formed therein is disposed, the stage being movable along an X-axis direction and a Y-axis direction, and a tilt refractive lens configured to transform the laser beam having a cross-sectional area of a rectangle shape into a tilted laser beam having a cross-sectional area of a non-rectangular parallelogram shape and to irradiate the tilted laser beam perpendicular to the stage.

Abstract: A laser crystallization apparatus includes a laser generating module configured to generate a laser beam, an optical module configured to guide the laser beam, an annealing chamber comprising a stage on which a target substrate comprising an amorphous thin film formed therein is disposed, the stage being movable along an X-axis direction and a Y-axis direction, and a tilt refractive lens configured to transform the laser beam having a cross-sectional area of a rectangle shape into a tilted laser beam having a cross-sectional area of a non-rectangular parallelogram shape and to irradiate the tilted laser beam perpendicular to the stage.

Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.