Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions.

Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.

Abstract: A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

Abstract: There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head.

Abstract: There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction.

Abstract: There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

Abstract: There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.