Abstract: Provided is a diaphragm edge of a speaker which is formed by compressing a material including silicon rubber and has an emboss portion on a front surface thereof so that sensitivity of sound is improved. Also, a diaphragm edge of a speaker is formed by compressing a material including silicon rubber and powdered viscose rayon and has an emboss on a front surface thereof.

Abstract: A small portable power pack includes a fuel/air supply for mixing fuel, which is supplied from outside, with outside air, thereby providing mixed gas; a uniflow scavenging micro-engine for receiving mixed gas from the fuel/air supply and igniting mixed gas to explode; a control panel for operating and controlling the uniflow scavenging micro-engine; a capacitor battery for powering the control panel and the uniflow scavenging micro-engine. The portable power pack is easily carried and used without the restriction of spaces and sites.

Abstract: The present invention relates to a multiple host-based network security device and a method for processing packet data using the network security device. The multiple host-based network security device of the present invention comprises at least two individual hosts in a single host system. Each of the individual hosts comprises individual resources such as a central processing unit (CPU) and a memory, and performs a different task in a single host system. The network security device comprises a packet policy module for providing a packet classification policy such that packet data are sent properly to the individual hosts, and a packet processing unit for sending the packet data to a relevant individual host according to the packet classification policy and providing services or blocking the packet data in accordance with packet checking results performed in the individual hosts. Thus, the data processing performance can be improved and the packet data can be stably checked.

Abstract: An anti-miss alarm system, method, and a shoe supporting the anti-miss alarm is provided. The anti-miss alarm method receives a radio signal emitted from a portable article having an interface for a wireless personal area network (WPAN), extracts channel status information from the radio signal, calculates a relative distance from the portable article based on the channel status information, and outputs alarm signals in a stepwise manner according to the relative distance. A mobile terminal includes an interface of a WPAN, a control unit, and an output unit. The interface receives radio signals emitted from a portable article having a similar interface. The control unit extracts channel status information from the radio signals and estimates a relative distance from the portable article based on the channel status information. The output unit controllably outputs alarm signals in a stepwise manner according to the relative distance.

Abstract: The present invention relates to a silicone-based coating composition with middle and high refractive index, a method of preparing the same, and an optical lens prepared therefrom, and more specifically to a silicone-based coating composition including organosilanes, inorganic oxides having a refractive index of from 1.7 to 3.0, an aluminum acetyl acetone, a C1-C5 alkyl cellosolve, and a solvent, a method of preparing the same, and an optical lens prepared therefrom. The siloxane-based coating composition is transparent, not sticky, and stable for long time storage. Therefore, the coating composition can be applied to a coating layer on a surface of a plastic lens such as an optical lens, an industrial safety lens, or goggles for leisure.

Abstract: The present invention relates to a silicone-based coating composition improved adhesion and dyeability, and more specifically, to a silicone-based coating composition prepared by adding a compound(s) having at least one functional group selected from the group consisting of amino, carboxylic acid, mercapto, methylol, anhydride, and isocyanate into an organic-inorganic sol prepared by a sol-gel reaction of organosilanes at high temperature, a method of preparing the same, and an optical lens prepared therefrom. The dyeability of the coating composition is improved by conducting sol-gel reaction at high temperature, and the adhesion to the substrate is improved by adding the compound capable of hydrogen bond and condensation reaction. Therefore, the coating layer of the present invention is proper to be applied to a coating layer for a plastic lens such as glasses, an industrial glass, or goggles for leisure because of good dyeability and adhesion to substrate.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor.

Abstract: Provided is a semiconductor device having an etch-resistant L-shaped spacer and a fabrication method thereof. The semiconductor device comprises a semiconductor substrate, a gate insulating layer formed on the semiconductor substrate, a gate electrode formed on the gate insulating layer, an L-shaped lower spacer conformally formed on sidewalls of the gate electrode and a portion of the substrate, an etch-resistant L-shaped spacer conformally formed on the L-shaped lower spacer, low-concentration source/drain regions aligned to sides of sidewall portions of the L-shaped lower spacer and formed within the substrate, and high-concentration source/drain regions aligned to sides of a bottom portions of the etch-resistant L-shaped spacer and formed within the substrate.

Abstract: An apparatus and method for a handover in a mobile communication system are provided. The handover apparatus includes an interface unit for setting a first path used before the handover and a second path used after the handover, for the mobile terminal undergoing the handover. A controller determines whether or not data to be transmitted to the mobile terminal is real-time data upon receipt of the data, transmits the data to the mobile terminal through the first and second paths when it is determined to be real-time data, and buffers the data and transmits the buffered data to the mobile terminal through the second path after completion of the handover when it is determined not to be real-time data. A buffer stores the buffered data until the handover is completed.

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: There are provided a nonvolatile memory device and a method of fabricating the same. A gate region of the nonvolatile memory device is formed as a stack structure including a tunnel oxide layer, a trapping layer, a blocking layer and a control gate electrode. The trapping layer is formed of a high-k dielectric having a higher dielectric constant than that of the tunnel oxide layer. When the trapping layer is formed of high-k dielectric, an EOT in a same thickness can be reduced, and excitation of electrons of the control gate electrode to the tunnel oxide layer due to a high potential barrier relative to the tunnel oxide layer is prevented so that program and erase voltages can be further reduced. As such, a problem that the tunnel oxide layer is damaged due to the conventional high program and erase voltages can be solved by reducing the program and erase voltages, and program and erase speeds of the transistor can be further improved.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: Disclosed herein is a network security system and method. The network security system includes a packet-dedicated processor for primarily performing hardware filtering on static attacks of network traffic, and a host system provided with a software filter for secondarily performing software filtering on dynamic attacks of network traffic. In the network security method, hardware filtering is performed on static network traffic attacks, software filtering is performed on dynamic network traffic attacks based on an analysis the results of the hardware filtering and packet streams generated by incoming packets for a predetermined time, and intrusion prevention information is provided to an administrator based on the accumulation and an analysis of the results of the software filtering.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: The present invention relates generally to a worm blocking system including a dedicated hardware-based board for performing pattern matching without a change in an existing network environment, which is installed in front of a network to be protected, inspects whether worm-related patterns exist on all packets on communication lines without loss or delay, passes packets through the system or blocks packets according to corresponding security rules and informs an administrator of results in real time, and a worm blocking method. In particular, the present invention relates to a hardware-based system and method for detecting and blocking worm-related packets which is suitable for a gigabit environment.

Abstract: Provided is a diaphragm edge of a speaker which is formed by compressing a material including silicon rubber and has an emboss portion on a front surface thereof so that sensitivity of sound is improved. Also, a diaphragm edge of a speaker is formed by compressing a material including silicon rubber and powdered viscose rayon and has an emboss on a front surface thereof.

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.