Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semiconductor substrate. The substrate having the window is cleaned, thereby removing any native oxide layer on the exposed substrate. The cleaned substrate is oxidized. Accordingly, a sacrificial oxide layer is formed thereon. The sacrificial oxide layer is removed. Thus, the exposed substrate has substantially no crystalline defects. A single crystalline semiconductor layer is then grown on the exposed substrate using SEG.

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract: A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semiconductor substrate. The substrate having the window is cleaned, thereby removing any native oxide layer on the exposed substrate. The cleaned substrate is oxidized. Accordingly, a sacrificial oxide layer is formed thereon. The sacrificial oxide layer is removed. Thus, the exposed substrate has substantially no crystalline defects. A single crystalline semiconductor layer is then grown on the exposed substrate using SEG.