Abstract: A display device including a substrate having a display area to display an image and a non-display area, at least one pixel provided on the substrate, a first insulating layer provided on the substrate, and including a first opening at a area adjacent to the display area, a second insulating layer provided on the first insulating layer, and including a second opening at the area adjacent to the display area, and an encapsulation layer covering the first opening, the second opening, and a portion of the non-display area. The pixel includes a first electrode provided on the first insulating layer, and a second electrode provided on the second insulating layer. At least one of the first electrode and the second electrode includes a metal layer. At least one of sides of the first opening includes a plurality of slopes having different inclinations.

Abstract: A display device including a substrate having a display area to display an image and a non-display area, at least one pixel provided on the substrate, a first insulating layer provided on the substrate, and including a first opening at a area adjacent to the display area, a second insulating layer provided on the first insulating layer, and including a second opening at the area adjacent to the display area, and an encapsulation layer covering the first opening, the second opening, and a portion of the non-display area. The pixel includes a first electrode provided on the first insulating layer, and a second electrode provided on the second insulating layer. At least one of the first electrode and the second electrode includes a metal layer. At least one of sides of the first opening includes a plurality of slopes having different inclinations.

Abstract: A display device including a substrate having a display area to display an image and a non-display area, at least one pixel provided on the substrate, a first insulating layer provided on the substrate, and including a first opening at a area adjacent to the display area, a second insulating layer provided on the first insulating layer, and including a second opening at the area adjacent to the display area, and an encapsulation layer covering the first opening, the second opening, and a portion of the non-display area. The pixel includes a first electrode provided on the first insulating layer, and a second electrode provided on the second insulating layer. At least one of the first electrode and the second electrode includes a metal layer. At least one of sides of the first opening includes a plurality of slopes having different inclinations.

Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area near the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode.

Abstract: A display device including a substrate having a display area to display an image and a non-display area, at least one pixel provided on the substrate, a first insulating layer provided on the substrate, and including a first opening at a area adjacent to the display area, a second insulating layer provided on the first insulating layer, and including a second opening at the area adjacent to the display area, and an encapsulation layer covering the first opening, the second opening, and a portion of the non-display area. The pixel includes a first electrode provided on the first insulating layer, and a second electrode provided on the second insulating layer. At least one of the first electrode and the second electrode includes a metal layer. At least one of sides of the first opening includes a plurality of slopes having different inclinations.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening.

Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

Abstract: A flexible display device including: a display substrate having a display area and a peripheral area surrounding the display area; a plurality of pixels formed in the display area; a passivation layer covering the pixels from the top to protect the pixels; a polarization film layer provided at the top of the passivation layer and of which an edge is extended outside an edge of the passivation layer; and a film wiring made of a flexible material of which one end is connected to the peripheral area.

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.