Abstract: Disclosed are an oxidizing electrode, a water electrolysis device including the same and a method for manufacturing the same. According to exemplary embodiments of the present disclosure, there is provided an oxidizing electrode with improved performance at low loadings of noble metals, especially, ruthenium (Ru) and iridium oxide, in which a ruthenium (Ru) layer and an iridium oxide layer formed on a substrate by electrodeposition in a sequential order are supported by electrochemical reaction rather than physical bonding.

Abstract: Advances in optical coherence tomography (OCT) have prompted a transition from time domain OCT, providing 2D OCT images, to spectral domain OCT, which has a 3D imaging capability. Yet conventional technology offers little toward the goal of inter-device compatibility between extant 2D OCT images and newer 3D OCT images for the same or comparable subjects, as in the context of ongoing monitoring the quantitative status of a patient's eyes. The inventive methodology is particularly useful to identify the scan location of tissue in a 2D OCT image within the 3D OCT volumetric data, thereby allowing clinicians to image a patient via 3D OCT, based on available 2D OCT images, with minimal inter-device variation.

Abstract: A scan location matching (SLM) method identifies conventional time domain optical coherence tomography (TD-OCT) circle scan locations within three-dimensional spectral domain OCT scan volumes. A technique uses both the SLM algorithm and a mathematical retinal nerve fiber bundle distribution (RNFBD) model, which is a simplified version of the anatomical retinal axon bundle distribution pattern, to normalize TD-OCT thickness measurements for the retinal nerve fiber layer (RNFL) of an off-centered TD-OCT circle scan to a virtual location, centered on the optic nerve head. The RNFBD model eliminates scan-to-scan RNFL thickness measurement variation caused by manual placement of TD-OCT circle scan.

Abstract: A scan location matching (SLM) method identifies conventional time domain optical coherence tomography (TD-OCT) circle scan locations within three-dimensional spectral domain OCT scan volumes. A technique uses both the SLM algorithm and a mathematical retinal nerve fiber bundle distribution (RNFBD) model, which is a simplified version of the anatomical retinal axon bundle distribution pattern, to normalize TD-OCT thickness measurements for the retinal nerve fiber layer (RNFL) of an off-centered TD-OCT circle scan to a virtual location, centered on the optic nerve head. The RNFBD model eliminates scan-to-scan RNFL thickness measurement variation caused by manual placement of TD-OCT circle scan.

Abstract: Advances in optical coherence tomography (OCT) have prompted a transition from time domain OCT, providing 2D OCT images, to spectral domain OCT, which has a 3D imaging capability. Yet conventional technology offers little toward the goal of inter-device compatibility between extant 2D OCT images and newer 3D OCT images for the same or comparable subjects, as in the context of ongoing monitoring the quantitative status of a patient's eyes. The inventive methodology is particularly useful to identify the scan location of tissue in a 2D OCT image within the 3D volumetric data, thereby allowing clinicians to image a patient via 3D OCT, based on available 2D OCT images, with minimal inter-device variation.

Abstract: A thermal refiningless, hot-rolled steel exhibits impact strength in excess of 10kgf.multidot.m/cm.sup.2 and contains, expressed in terms of weight percent, 0.30-0.50% carbon, 0.15-0.60% silicon, 0.80-1.60% manganese, up to 0.02% phosphorus, up to 0.015% sulfur, 0.07-0.20% vanadium, 0.015-0.06% aluminum, 0.005-0.015% nitrogen, up to 0.0015% oxygen, the balance iron and unavoidable impurities. The steel of the above-identified property and composition is produced by casting a steel product of predetermined cross-sectional shape; heating the steel product up to a temperature of 1,100.degree.-1,250.degree. C.; hot-rolling the heated steel product at a final rolling temperature of 850.degree.1,000.degree. C.; normalizing the hot-rolled steel product at a temperature of 880.degree.-950.degree. C.; and cooling the normalized steel product down to 300.degree. C. at a cooling speed of 5.degree.-100.degree. C./min.

Abstract: A semiconductor laser capable of minimizing generation of defects at the interface between grown layers, and a method for fabricating the same.

Abstract: A DRAM having a vertical transistor of a highly integrated semiconductor device and its manufacturing method are disclosed. A DRAM has a silicon substrate, a word line formed in a silicon substrate, a gate oxide layer formed on the side wall of the word line, a bit line junction region formed on the bottom of a silicon substrate, a bit line that is connected to the a bit line junction region and is insulated from the word line via a first insulating layer, a charge storage electrode junction region formed near the bottom of silicon substrate surface, a pad polysilicon layer that is insulated from the a word line via a second insulating layer and is connected at the top of a charge storage electrode diffusion region, and a charge storage electrode that is connected to the pad polysilicon layer through a contact.

Abstract: A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.

Abstract: A DRAM having a vertical transistor of a highly integrated semiconductor device and its manufacturing method are disclosed. A DRAM has a silicon substrate, a word line formed in a silicon substrate, a gate oxide layer formed on the side wall of the word line, a bit line junction region formed on the bottom of a silicon substrate, a bit line that is connected to the a bit line junction region and is insulated from the word line via a first insulating layer, a charge storage electrode junction region formed near the bottom of silicon substrate surface, a pad polysilicon layer that is insulated from the a word line via a second insulating layer and is connected at the top of a charge storage electrode diffusion region, and a charge storage electrode that is connected to the pad polysilicon layer through a contact.

Abstract: A process for purification and recovery of phenylalanine from a microbial fermentation broth containing phenylalanine which comprises providing a zinc salt of phenylalanine at a pH of 7-9, adding acid at a pH of 4-7, and separating precipitated phenylalanine.

Abstract: A slurry mixture comprising a carboxyl containing polymer of vinylidene monomers having at least one terminal methylene group and a polymerizing solvent is effectively dried by way of: passing said mixture through one or a plurality of preheated double pipe heat exchangers in order to produce a two-phase mixture comprising the pulverized polymer and the vaporized solvent; and, then, feeding said two-phase mixture to a rotary vacuum dryer in order to further remove and separate the vaporized solvent from the powdery polymer.

Abstract: Vinyl dispersion resins containing a major proportion of vinyl chloride that provide fluid suspensions thereof with thixotropic properties are obtained by isolating and drying the vinyl chloride polymer resin from an emulsion (latex) thereof containing a small amount of a cross-linked, water-swellable polymer of an unsaturated carboxylic acid.