Patents by Inventor Jong S. Yoon

Jong S. Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240150771
    Abstract: Therapeutic compounds for red blood cell-mediated delivery of an active pharmaceutical ingredient to a target cell are described. The therapeutic compounds are configured to bind CD47 on the surface of a red blood cell and to be subsequently transferred to CD47 on the surface of the target cell, the therapeutic compound ultimately being internalized by the target cell via endocytosis. The target cell may be a fibrotic cell.
    Type: Application
    Filed: January 9, 2024
    Publication date: May 9, 2024
    Inventors: HoWon J. Kim, In-San Kim, Jay S. Kim, Sun Hwa Kim, Ick Chan Kwon, Jong Won Lee, Yoo Soo Yang, Hong Yeol Yoon
  • Patent number: 7018888
    Abstract: The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (100), among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having sidewall spacers (210 or 410) on opposing sidewalls thereof and placing source/drain implants (310, 510) into the substrate (110) proximate the gate structure (130). The method further includes removing at least a portion of the sidewall spacers (210 or 410) and annealing the source/drain implants (310, 510) to form source/drain regions (710) after removing the at least a portion of the sidewall spacers (210 or 410).
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: March 28, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Brian E. Goodlin, Amitava Chatterjee, Shirin Siddiqui, Jong S. Yoon
  • Patent number: 5055319
    Abstract: A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.
    Type: Grant
    Filed: April 2, 1990
    Date of Patent: October 8, 1991
    Assignee: The Regents of the University of California
    Inventors: Rointan F. Bunshah, Chandra V. Deshpandey, Hans J. Doerr, Jong S. Yoon