Abstract: A bubble column reactor includes a reaction zone in which a reaction of a gaseous reactant is carried out in a liquid reaction medium, a first disengaging section provided above the reaction zone and into which a first effluent stream rising from the reaction zone is introduced, and a condensation zone provided above the first disengaging section. The bubble column reactor's condensation zone diameter is smaller than the diameter of the first disengaging section.

Abstract: A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

Abstract: A systems and methods for tracking a position of an electrode. The system may include: a notching controller configured to store pitch information of a unit electrode and to acquire electrode coordinate information of the electrode in a roll-to-roll state during a notching process and a cell identification (ID) of the unit electrode; a calculator configured to calculate coordinates of the cell ID from the pitch information and the cell ID; a roll map generator configured to generate a roll map based on the electrode coordinate information transmitted from the notching controller; and a mapping part configured to compare the coordinates of the roll map with the coordinates of the cell ID to derive an electrode position of the electrode during the electrode manufacturing process from which the unit electrode originates.

Abstract: A video decoding method and a video decoding apparatus are configured to decode video. To efficiently code residual blocks obtained from block-based motion compensation, a video encoding apparatus and the video decoding apparatus divide a relevant residual block of a current block into two subblocks in a horizontal or vertical direction and encode one residual subblock alone out of the two residual subblocks.

Abstract: A power semiconductor device includes a silicon carbide (SiC) semiconductor layer, a first gate and a second gate buried in the semiconductor layer, a first base region positioned at least at one side of the first gate and having a first conductive type, a second base region positioned at least at one side of the second gate and a second conductive type, a first source region positioned at least at one side of the first gate to make contact with the first base region and the second base region and having the second conductive type, a second source region positioned at least at one side of the second gate to make contact with the first base region and the second base region and having the first conductive type, and a source electrode positioned over the semiconductor layer to make contact with the first source region and the second source region.

Abstract: There is provided a method of extracting a noise defect from defect data.

Abstract: A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.

Abstract: Provided is a substrate processing apparatus including a chamber providing a processing space in which a process is performed on a substrate coated with an organic solvent using a fluid in a supercritical state, a tray unit supporting the substrate and provided to be inserted into the chamber and withdraw from the chamber through an opening of the chamber, and a detector configured to measure a resistance of the substrate.

Abstract: A method is executed to efficiently operate a bin buffer to limit a bin-to-bit ratio in entropy encoding and decoding related to bitstream generation and parsing. In addition, a method of configuring a list includes various entropy encoding/decoding methods and adaptively uses the entropy encoding/decoding methods for each basic unit of entropy encoding/decoding.

Abstract: Provided is a substrate processing apparatus, more particularly, a substrate processing apparatus for detecting a progress and end point of a process for a substrate when a process such as a drying process is performed for a substrate using a supercritical fluid.

Abstract: The probe for hydrogen sulfide detection according to the present invention is represented by chemical formula 1 below.

Abstract: A video decoding method and a video decoding apparatus are configured to decode video. To efficiently code residual blocks obtained from block-based motion compensation, a video encoding apparatus and the video decoding apparatus divide a relevant residual block of a current block into two subblocks in a horizontal or vertical direction and encode one residual subblock alone out of the two residual subblocks.

Abstract: A power semiconductor device includes a silicon carbide (SiC) semiconductor layer, a first gate and a second gate buried in the semiconductor layer, a first base region positioned at least at one side of the first gate and having a first conductive type, a second base region positioned at least at one side of the second gate and a second conductive type, a first source region positioned at least at one side of the first gate to make contact with the first base region and the second base region and having the second conductive type, a second source region positioned at least at one side of the second gate to make contact with the first base region and the second base region and having the first conductive type, and a source electrode positioned over the semiconductor layer to make contact with the first source region and the second source region.

Abstract: An inverse quantization method is implemented by an inverse quantization device, the method configured for acquiring quantized coefficients, estimating a quantization parameter in quantization groups or quantization parameter prediction group units, generating an inverse quantization matrix for adaptive quantization, and generating transform coefficients from the quantized coefficients using the quantization parameter and the inverse quantization matrix.

Abstract: An inverse quantization method is implemented by an inverse quantization device, the method configured for acquiring quantized coefficients, estimating a quantization parameter in quantization groups or quantization parameter prediction group units, generating an inverse quantization matrix for adaptive quantization, and generating transform coefficients from the quantized coefficients using the quantization parameter and the inverse quantization matrix.

Abstract: An inverse quantization method is implemented by an inverse quantization device, the method configured for acquiring quantized coefficients, estimating a quantization parameter in quantization groups or quantization parameter prediction group units, generating an inverse quantization matrix for adaptive quantization, and generating transform coefficients from the quantized coefficients using the quantization parameter and the inverse quantization matrix.

Abstract: An inverse quantization method is implemented by an inverse quantization device, the method configured for acquiring quantized coefficients, estimating a quantization parameter in quantization groups or quantization parameter prediction group units, generating an inverse quantization matrix for adaptive quantization, and generating transform coefficients from the quantized coefficients using the quantization parameter and the inverse quantization matrix.

Abstract: Provided are an apparatus and a method for computing a path for forwarding user data through the following steps: receiving a state measurement value or a state prediction value corresponding to the state measurement value of a state of a plurality of network resources within a mobile core network and a transport network; and computing the path for forwarding the user data, on the basis of either the state measurement value or the state prediction value, and topology of the mobile core network and topology of the transport network.

Abstract: Provided is a network function for determining a path for transmitting user data through the following steps: receiving, from an SMF, a path calculation request for a path for transmitting user data; and determining the path on the basis of information on a core network and information on a transport network coupled to a user plane layer of the core network.

Abstract: A power semiconductor device includes a semiconductor layer, a well region located inside the semiconductor layer and having a first conductivity type, a source region located on the well region and having a second conductivity type, a gate region in contact with a side surface of the well region and surrounding the well region, a drift region in contact with bottom surfaces of the well region and the gate region and having the second conductivity type, and a contact region located on the well region and having the first conductivity type. The drift region includes a protruding region in contact with another side surface of the well region. The power semiconductor device includes a source electrode in contact with each of the source region, the contact region, and the protruding region.