Abstract: Provided is a low power consuming, highly precise, wide-range temperature sensor. The temperature sensor includes a current mirror, a first MOS transistor, and a second MOS transistor. The current mirror generates a first reference current in response to a particular current applied by a power voltage and a second reference current in response to the first reference current so as to output the first and second reference currents. The first MOS transistor includes a drain terminal D1 receiving the first reference current and a gate terminal G1 receiving a bias voltage. The second MOS transistor includes a drain terminal D2 receiving the second reference current, and the second MOS transistor generates an output voltage.

Abstract: Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.

Abstract: A siloxane-based resin having germanium and an interlayer insulating, film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Abstract: A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.

Abstract: A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: A composition for forming a low-dielectric constant film comprising a substituted fullerene, a low-dielectric constant film formed from the composition, and a method for forming the low-dielectric constant film are provided. The low-dielectric constant film has superior mechanical properties, such as hardness and elastic modulus, and excellent thermal conductivity.

Abstract: A composition for forming a low dielectric thin film, which includes a silane polymer, polymer nanoparticles, a porogen and an organic solvent, and a method of preparing a low dielectric thin film using the same. The low dielectric thin film prepared using the composition of this disclosure has a low dielectric constant and excellent mechanical strength. As well, the polymer nanoparticles in the low dielectric thin film have a uniform diameter and are soft, and thus are advantageously applied to a chemical-mechanical polishing process.

Abstract: A siloxane-based resin having germanium and an interlayer insulating-film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Abstract: A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.

Abstract: A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.

Abstract: A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges(B), an acyclic alkoxy silane monomer(C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract: A siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.