Abstract: Provided is a method for forming a SiCN thin film. The method includes the steps of: loading a target wafer onto a chuck heater located inside a chamber; operating the chuck heater to allow the target wafer to be heated to a target deposition temperature in the range of 200 to 550° C.; setting a target process pressure in the chamber to 2.0 to 10.0 Torr; and injecting a gas for plasma excitation and first and second reaction gases for forming the SiCN thin film into the chamber set to the target deposition temperature and the target process pressure to allow the SiCN thin film to have a refractive index in the range of 1.80 to 2.40.

Abstract: Provided is a method for forming a SiCN thin film. The method includes the steps of: loading a target wafer onto a chuck heater located inside a chamber; operating the chuck heater to allow the target wafer to be heated to a target deposition temperature in the range of 200 to 550° C.; setting a target process pressure in the chamber to 2.0 to 10.0 Torr; and injecting a gas for plasma excitation and first and second reaction gases for forming the SiCN thin film into the chamber set to the target deposition temperature and the target process pressure to allow the SiCN thin film to have a refractive index in the range of 1.80 to 2.40.