Abstract: Disclosed herein are a printed circuit board and a fabrication method thereof, which can improve electrical properties, shorten processing time, and reduce the thickness of a chip package by achieving an ultra-thin fine circuit pattern. The printed circuit board includes an insulating material; a via-hole formed in a given location of the insulating material; a copper seed layer formed through ion beam surface treatment and vacuum deposition on the surface of the insulating material having the via-hole formed therein; and a copper pattern plating layer formed on a given region of the insulating material, which has the copper seed layer formed thereon, and in the via-hole.

Abstract: A method is provided for measuring interface trap density in a semiconductor device. In the method, measurement parameters are input to a host computer. A pulse condition is set at a pulse generator using the measurement parameters. A pulse of a predetermined frequency generated by the pulse generator is applied to a gate of a transistor, and a charge pumping current is measured from a bulk of the transistor. A charge pumping current measurement may be repeated for a plurality of frequencies while changing the frequency until a set frequency is reached. A pure charge pumping current is calculated for each frequency where a gate tunneling leakage current is removed from the charge pumping current measured for each frequency. Interface trap density is calculated from the calculated pure charge pumping current for each frequency.

Abstract: Provided are a method for measuring an end-to-end delay, and asynchronous packet transmitter/receiver, capable of conveniently and exactly measuring a packet delay in an asynchronous packet transfer network in which a transfer priority is determined as in MPLS. The method includes the steps of continuously transmitting a higher priority packet and a lower priority packet at an ingress node, measuring a time when the higher priority packet arrives at an egress node, measuring a time when the lower priority packet arrives at the egress node, and calculating a delay time from the arrival time of the higher and lower priority packets.

Abstract: The present invention relates to a horn speaker, and in particular to a horn speaker capable of decreasing the length of a horn by forming a sound path in a curved shape in the interior of a horn. The horn speaker includes a first sound path, a second sound path formed in a shape of surrounding the first sound path, and a third sound path formed in a ring shape. The sound paths formed in the interior of the horn is curved, so that the length of the horn is decreased as compared to the conventional horn in which a straight line shaped sound path is formed.

Abstract: A display device using a light modulator and having an improved numerical aperture (NA) of an after-edge lens system is disclosed. The display device includes an illumination lens, a diffractive light modulator, an NA improvement unit, a filter system and a projection system. The illumination lens converts light into linear parallel light, and outputs the linear parallel light. The diffractive light modulator produces diffracted light beams having a plurality of diffraction orders by modulating the linear parallel light incident from the illumination lens according to an external control signal. The NA improvement unit causes + and ? diffracted light beams of the diffracted light beams to come close to each other. The filter system passes only some of the diffracted light beams having predetermined orders, therethrough. The projection system focuses the diffracted light beams onto an object and allows the focused diffracted light to scan the object.

Abstract: A semiconductor package using flip-chip mounting technique is disclosed. The semiconductor package includes: a semiconductor device provided with a plurality of first pads extending from the semiconductor device; a substrate provided with a plurality of second pads extending from the substrate at positions in registry with the location of the first pads of the semiconductor device; and an anisotropic conductive material interposed between the plurality of first pads and the plurality of second pads to electrically connect the first pads to associated second pads, the anisotropic conductive material positioned at discrete locations around the semiconductor device, thereby providing unobstructed clearance at desired locations between the semiconductor device and the substrate.

Abstract: Disclosed is a diffractive micromirror and a method of producing the same. More particularly, the present invention pertains to a diffractive micromirror, in which a recess having a desired depth and width is precisely formed in a piezoelectric operation manner, and a method of producing the same.