Patents by Inventor Jong-Sun Ahn

Jong-Sun Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8790158
    Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: July 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: One-Moon Chang, Jae-Phil Boo, Jong-Bok Kim, Soo-Young Tak, Jong-Sun Ahn, Shin Kim
  • Patent number: 8734206
    Abstract: A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: May 27, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: One-Moon Chang, Jae-Phil Boo, Soo-Young Tak, Jong-Sun Ahn, Shin Kim, Kyoung-Moon Kang
  • Patent number: 8662958
    Abstract: A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: March 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-sun Ahn, In-seak Hwang, Soo-young Tak, Shin Kim, One-moon Chang
  • Publication number: 20130223227
    Abstract: A femto access point in a communication system provides an interface for a UE, an interface for a macro access point or a relay, and an interface for a core network.
    Type: Application
    Filed: February 25, 2010
    Publication date: August 29, 2013
    Applicant: CS CORPORATION
    Inventors: Jung-Suk Lee, Ho-Sung Yoon, Hak-Yong Lee, Kyung-Wun Chang, Jong-Sun Ahn, Se-Won Jung
  • Publication number: 20110217911
    Abstract: A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 8, 2011
    Inventors: One-Moon CHANG, Jae-Phil Boo, Soo-Young Tak, Jong-Sun Ahn, Shin Kim, Kyoung-Moon Kang
  • Publication number: 20110217910
    Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.
    Type: Application
    Filed: February 24, 2011
    Publication date: September 8, 2011
    Inventors: One-Moon CHANG, Jae-Phil Boo, Jong-Bok Kim, Soo-Young Tak, Jong-Sun Ahn, Shin Kim
  • Publication number: 20110171882
    Abstract: A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.
    Type: Application
    Filed: January 5, 2011
    Publication date: July 14, 2011
    Inventors: Jong-sun Ahn, In-seak Hwang, Soo-young Tak, Shin Kim, One-moon Chang
  • Patent number: 7268029
    Abstract: Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.
    Type: Grant
    Filed: November 19, 2004
    Date of Patent: September 11, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-kuk Chung, Joon Kim, Suk-Chul Bang, Jong-Sun Ahn, Sang-hoon Lee, Woo-soon Jang, Yung-jun Kim
  • Publication number: 20050112814
    Abstract: Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.
    Type: Application
    Filed: November 19, 2004
    Publication date: May 26, 2005
    Inventors: Eun-kuk Chung, Joon Kim, Suk-Chul Bang, Jong-Sun Ahn, Sang-hoon Lee, Woo-soon Jang, Yung-jun Kim
  • Publication number: 20040078431
    Abstract: This invention relates to a multimedia chatting service. Particularly, when a user copies multimedia (for example, a text, an image, a dynamic image) from a web page and pastes it to a dialogue window, the dialogue window analyzes the copied contents (multimedia) and transfers it to a chatting server.
    Type: Application
    Filed: August 18, 2003
    Publication date: April 22, 2004
    Inventor: Jong-Sun Ahn
  • Publication number: 20030154213
    Abstract: The present invention relates to an automatic community generation system and method with hierarchical data structure. The automatic community generation system receives user's information through the network. At least one community is generated automatically according to the user's information. A major or area community can be located at top level of a hierarchical data structure referring to communities. A web page of a community includes link data, image data or university data and the data are constructed in predetermined position of the community web page. A user can select at least one community for working. The community generation system selects a private web data from the user's information. The private web data are appeared in the community web page to be entered by the user. The private web data or addresses of them are stored in database. At least one user's web page is generated from user's information and specified information of the community to be entered by the user.
    Type: Application
    Filed: December 6, 2002
    Publication date: August 14, 2003
    Inventor: Jong-Sun Ahn