Abstract: In an apparatus for manufacturing semiconductor devices, a container is disposable on a load port and is adapted to accommodate one or more wafers. A transfer robot is installed at a frame and the frame is located between the load port and processing equipment. The transfer robot moves the one or more wafers between the processing equipment and the container. A gas supplying part blows a more desirable gas, e.g., a nitrogen gas or an inert gas, into the container through opening holes formed through a wall of the container. The more desirable gas flows (due to a pressure gradient) from the container to the frame to substantially (if not completely) prevent a less desirable gas (e.g., contaminated air) in the frame from entering the container as the one or more wafers are moved between the container and the processing chamber.

Abstract: Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.

Abstract: Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.