Patents by Inventor Jong Sun Maeng
Jong Sun Maeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180337307Abstract: A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm3) of the second layer.Type: ApplicationFiled: December 14, 2017Publication date: November 22, 2018Inventors: Jung Taek HAN, Jong Sun MAENG, Jeen Seok CHO, Sun Woon KIM, Yong Hee JEONG
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Patent number: 9525106Abstract: A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0<x?1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer.Type: GrantFiled: April 1, 2015Date of Patent: December 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sun Maeng, Jun Youn Kim, Sung Min Choi, Kyung Ho Yoo
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Publication number: 20160056325Abstract: A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0<x?1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer.Type: ApplicationFiled: April 1, 2015Publication date: February 25, 2016Inventors: Jong Sun MAENG, Jun Youn KIM, Sung Min CHOI, Kyung Ho YOO
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Patent number: 9171994Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.Type: GrantFiled: October 20, 2014Date of Patent: October 27, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sun Maeng, Young Sun Kim, Hyun Wook Shim, Sung Tae Kim
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Publication number: 20150037920Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Inventors: Jong Sun MAENG, Young Sun KIM, Hyun Wook SHIM, Sung Tae KIM
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Patent number: 8895356Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.Type: GrantFiled: June 30, 2011Date of Patent: November 25, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Sun Maeng, Young Sun Kim, Hyun Wook Shim, Sung Tae Kim
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Patent number: 8884269Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.Type: GrantFiled: July 23, 2012Date of Patent: November 11, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Sun Maeng, Bum Joon Kim, Ki Sung Kim, Suk Ho Yoon, Sung Tae Kim
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Patent number: 8859314Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.Type: GrantFiled: June 14, 2012Date of Patent: October 14, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Sun Maeng, Ki Ho Park, Bum Joon Kim, Hyun Seok Ryu, Jung Hyun Lee, Boung Kyun Kim, Ki Sung Kim, Suk Ho Yoon
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Patent number: 8822338Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.Type: GrantFiled: October 19, 2011Date of Patent: September 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Sun Maeng, Ki Sung Kim, Bum Joon Kim, Suk Ho Yoon, Hyun Seok Ryu, Sung Tae Kim
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Publication number: 20130020555Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.Type: ApplicationFiled: July 23, 2012Publication date: January 24, 2013Inventors: Jong Sun Maeng, Bum Joon Kim, Ki Sung Kim, Suk Ho Yoon, Sung Tae Kim
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Publication number: 20130014694Abstract: A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.Type: ApplicationFiled: July 12, 2012Publication date: January 17, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sun MAENG, Bum Joon KIM, Hyun Seok RYU, Jung Hyun LEE, Ki Sung KIM
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Publication number: 20120322188Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.Type: ApplicationFiled: June 14, 2012Publication date: December 20, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sun MAENG, Ki Ho PARK, Bum Joon KIM, Hyun Seok RYU, Jung Hyun LEE, Boung Kyun KIM, Ki Sung KIM, Suk Ho YOON
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Publication number: 20120167824Abstract: A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.Type: ApplicationFiled: October 31, 2011Publication date: July 5, 2012Inventors: Jong Sun MAENG, Ki Sung Kim, Bum Joon Kim, Hyun Seok Ryu, Sung Tae Kim
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Publication number: 20120171815Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.Type: ApplicationFiled: October 19, 2011Publication date: July 5, 2012Inventors: Jong Sun MAENG, Ki Sung Kim, Bum Joon Kim, Suk Ho Yoon, Hyun Seok Ryu, Sung Tae Kim
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Publication number: 20120009697Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.Type: ApplicationFiled: June 30, 2011Publication date: January 12, 2012Inventors: Jong Sun Maeng, Young Sun Kim, Hyun Wook Shim, Sung Tae Kim
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Patent number: 6987070Abstract: Disclosed is a method for forming a low-k dielectric layer of a semiconductor device. The method includes a step providing a semiconductor substrate having a predetermined pattern, a step coating porous powders having a micro size on the semiconductor by spraying the porous powders, and a step performing a heat treatment process with respect to a resultant structure, thereby forming the low-k dielectric layer. After micro-sized porous powders are coated on a semiconductor substrate, a heat treatment process is performed, so that powders are bonded to each other, thereby forming a low-k dielectric layer even if the dielectric layer has a dielectric constant equal to or less than 2.8. A signal delay time is reduced by depositing the low-k dielectric layer on the semiconductor substrate.Type: GrantFiled: June 23, 2004Date of Patent: January 17, 2006Assignee: Hynix Semiconductor Inc.Inventor: Jong Sun Maeng