Abstract: A multi-analysis method and apparatus use a plurality of analysis models to determine different traits of a sample from a signal produced from the sample. The analysis models include a model-THK and a model-CD. An optical signal from a pattern is produced. A thickness of the pattern is determined from the optical signal using the model-THK. A critical dimension (CD) of the pattern is determined from the optical signal using the model-CD. The thickness and the CD are output. The determinations of the thickness of the pattern and the CD of the pattern are made from the same optical signal, i.e., from a one time or single examination of the sample.

Abstract: In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.

Abstract: An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided.

Abstract: In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.

Abstract: In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.

Abstract: An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided.

Abstract: In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.

Abstract: A method for recognizing a pattern of an alignment mark on a wafer includes positioning the wafer on an adjustable wafer stage in an alignment apparatus; capturing images of a key alignment mark by magnifying an alignment mark region of the wafer; deleting image data from a region where the alignment pattern does not exist between the captured images; and extracting an alignment mark pattern by a pattern recognition of the remaining image data after the deletion of the image data. Thus, an alignment failure can be reduced because a particle on the wafer is not mistaken as an alignment mark.