Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Abstract: A tripod constant-velocity joint includes: an outer joint member having a cavity elongated in a longitudinal direction and three roller tracks; an inner joint member having a center body and three journals outwardly radially protruded from the center body; and three roller assemblies respectively coupled to the journal in a state of being respectively disposed in the roller tracks. The respective roller assembly comprises: an inner race which is connected to the journal and is provided with a first inner ball groove and a second inner ball groove on both lateral sides thereof; a first ball array and a second ball array respectively having a plurality of balls which are respectively disposed in the first inner ball groove and in the second inner ball groove; and a ball cage which restricts movements of the first ball array and the second ball array in a longitudinal direction thereof.

Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Abstract: A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

Abstract: A light emitting diode display device is provided.

Abstract: An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer, and sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Abstract: A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Abstract: A tripod constant-velocity joint includes: an outer joint member having a cavity elongated in a longitudinal direction and three roller tracks; an inner joint member having a center body and three journals outwardly radially protruded from the center body; and three roller assemblies respectively coupled to the journal in a state of being respectively disposed in the roller tracks. The respective roller assembly comprises: an inner race which is connected to the journal and is provided with a first inner ball groove and a second inner ball groove on both lateral sides thereof; a first ball array and a second ball array respectively having a plurality of balls which are respectively disposed in the first inner ball groove and in the second inner ball groove; and a ball cage which restricts movements of the first ball array and the second ball array in a longitudinal direction thereof.

Abstract: A light emitting diode display device is provided.

Abstract: A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.