Patents by Inventor Jong W. Park

Jong W. Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5521115
    Abstract: A high density substrate plate trench DRAM cell memory device and process are described in which a buried region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is contacted along its perimeter by a reach through region to complete the isolation. The combined regions reduce charge loss due to better control of device parasitics.
    Type: Grant
    Filed: September 30, 1994
    Date of Patent: May 28, 1996
    Assignee: International Business Machines Corporation
    Inventors: Jong W. Park, Steven H. Voldman
  • Patent number: 5384474
    Abstract: A high density substrate plate trench DRAM cell memory device and process are described in which a buried region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is contacted along its perimeter by a reach through region to complete the isolation. The combined regions reduce charge loss due to better control of device parasitics.
    Type: Grant
    Filed: November 5, 1993
    Date of Patent: January 24, 1995
    Assignee: International Business Machines Corporation
    Inventors: Jong W. Park, Steven H. Voldman
  • Patent number: 5166305
    Abstract: Novel aromatic polysulfoneetherketone polymers having recurring units of Formula: ##STR1## wherein Ar is phenylene, biphenylene or ##STR2## in which --Y-- represents ##STR3## The aromatic polysulfoneetherketone polymers of the invention have superior properties over the known polysulfone or polyetherketone series polymers in terms of heat resistance, chemical resistance and electric insulation as well as mechanical properties such as dimensional stability.
    Type: Grant
    Filed: January 4, 1991
    Date of Patent: November 24, 1992
    Assignee: Korea Institute of Science and Technology
    Inventors: Jong W. Park, In T. Lee
  • Patent number: 4926386
    Abstract: A memory system for storing an M.times.N array of data elements and for permitting simultaneous access to selected block, horizontal sequence and vertical sequence subarrays defined by the parameters p and q comprises only (pg+1) memory modules for storing the M.times.
    Type: Grant
    Filed: June 24, 1987
    Date of Patent: May 15, 1990
    Inventor: Jong W. Park