Patents by Inventor Jong-Wan Kwon

Jong-Wan Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250174469
    Abstract: Disclosed are a semiconductor manufacturing process capable of preventing residues from remaining, preventing a pattern from collapsing, controlling selectivity, and optimizing surface roughness, a semiconductor device manufactured through the semiconductor manufacturing process, and a substrate processing apparatus configured to perform the semiconductor manufacturing process. The semiconductor manufacturing process is performed to remove an oxide-nitride-oxide (ONO) layer formed on an outer side of a vertical layer in a horizontal space between a substrate and a base layer in a semiconductor pattern.
    Type: Application
    Filed: November 23, 2024
    Publication date: May 29, 2025
    Applicant: SEMES CO., LTD.
    Inventors: Sang Man PARK, Seong Kwang LEE, Yong Hoon SUNG, Hahn Joo YOON, Il Young KIM, Tae Wan KIM, In Hoe KIM, Thomas Jong Wan KWON, CHENGYEH HSU
  • Publication number: 20080268653
    Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
    Type: Application
    Filed: June 5, 2008
    Publication date: October 30, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung-seok KIM, Hong-bae PARK, Bong-hyun KIM, Sung-tae KIM, Jong-wan KWON, Jung-hyun LEE, Ki-chul KIM, Jae-soon LIM, Gab-jin NAM, Young-sun KIM
  • Patent number: 7396719
    Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: July 8, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Kim, Hong-bae Park, Bong-hyun Kim, Sung-tae Kim, Jong-wan Kwon, Jung-hyun Lee, Ki-chul Kim, Jae-soon Lim, Gab-jin Nam, Young-sun Kim
  • Patent number: 7135422
    Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
    Type: Grant
    Filed: July 2, 2004
    Date of Patent: November 14, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gab-Jin Nam, Jong-Wan Kwon, Han-Mei Choi, Jae-Soon Lim, Seung-Hwan Lee, Ki-Chul Kim, Sung-Tae Kim, Young-Sun Kim
  • Publication number: 20050009369
    Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
    Type: Application
    Filed: July 2, 2004
    Publication date: January 13, 2005
    Inventors: Gab-Jin Nam, Jong-Wan Kwon, Han-Mei Choi, Jae-Soon Lim, Seung-Hwan Lee, Ki-Chul Kim, Sung-Tae Kim, Young-Sun Kim
  • Publication number: 20040266217
    Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
    Type: Application
    Filed: June 23, 2004
    Publication date: December 30, 2004
    Inventors: Kyoung-seok Kim, Hong-bae Park, Bong-hyun Kim, Sung-tae Kim, Jong-wan Kwon, Jung-hyun Lee, Ki-chul Kim, Jae-soon Lim, Gab-jin Nam, Young-sun Kim