Patents by Inventor Jong-Wan SHIM

Jong-Wan SHIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CONNECTOR FOR HIGH-SPEED SIGNAL TRANSMISSION WITH RIGID ALIGNMENT FUNCTION
    Publication number: 20230223715
    Abstract: Proposed is a connector for high-speed signal transmission with a rigid alignment function. The connector allows rigid alignment between pin arrays as a part of the connector moves slightly in the left-right or front-rear direction depending on the degree of engagement between corresponding pins when coupled to a counterpart connector.
    Type: Application
    Filed: October 26, 2022
    Publication date: July 13, 2023
    Applicant: WITHWAVE
    Inventors: Sung Jin KIM, Jeong Il JEON, Maeng Youl LEE, Yong Goo LEE, Jeong Nam CHEON, Young Kun KWON, Bum Hee BAE, Youn Ho KIM, Jong Wan SHIM, Seong Soo HAN
  • PIN ARRAY ASSEMBLY AND CONNECTOR FOR HIGH-SPEED SIGNAL TRANSMISSION USING THE SAME
    Publication number: 20230146943
    Abstract: Proposed is a pin array assembly and a connector for high-speed signal transmission using the same and, more particularly, a connector technology in which high-speed signal transmission characteristics are guaranteed by implementing a pin array assembly with multiple pins whose pitches are precisely adjusted by insert injection and a connector capable of relieving stress caused by an external force while applying the pin array assembly.
    Type: Application
    Filed: October 26, 2022
    Publication date: May 11, 2023
    Applicant: WITHWAVE
    Inventors: Soo Joo LEE, Jeong Il JEON, Sung Jin KIM, Yong Goo LEE, Jeong Nam CHEON, Young Kun KWON, Bum Hee BAE, Youn Ho KIM, Jong Wan SHIM, Seong Soo HAN
  • Substrate comprising plurality of signal lines and electronic device comprising same
    Patent number: 10827605
    Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transmission rate than 4th generation (4G) communication systems such as long term evolution (LTE).
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: November 3, 2020
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Man-Ho Kim, Jong-Wan Shim, Hwa Joong Jung, Tae-Yun Kim, Yonghwan Choi, Kihuk Lee
  • SUBSTRATE COMPRISING PLURALITY OF SIGNAL LINES AND ELECTRONIC DEVICE COMPRISING SAME
    Publication number: 20200037439
    Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transmission rate than 4th generation (4G) communication systems such as long term evolution (LTE).
    Type: Application
    Filed: February 13, 2018
    Publication date: January 30, 2020
    Inventors: Man-Ho KIM, Jong-Wan SHIM, Hwa Joong JUNG, Tae-Yun KIM, Yonghwan CHOI, Kihuk LEE
  • Device for measuring integrated circuit current and method of measuring integrated circuit current using the device
    Patent number: 10401397
    Abstract: A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: September 3, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Sang-Ho Lim, Sang-Ho Lee, Chea-Ok Ko, Jong-Wan Shim, Jeong-Nam Cheon
  • DEVICE FOR MEASURING INTEGRATED CIRCUIT CURRENT AND METHOD OF MEASURING INTEGRATED CIRCUIT CURRENT USING THE DEVICE
    Publication number: 20140222360
    Abstract: A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 7, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-Ho LIM, Sang-Ho LEE, Chea-Ok KO, Jong-Wan SHIM, Jeong-Nam CHEON