Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract: A method for manufacturing semiconductor device includes forming an interlayer dielectric layer including a contact plug defined therein to electrically couple a semiconductor substrate on which a cell region and a dummy region are defined. A sacrificial layer is formed over the interlayer dielectric layer. An etch stop pattern is formed over the sacrificial layer, the etch stop pattern being vertically aligned to the dummy region. A storage electrode region through the sacrificial layer is defined to expose a first storage electrode contact of the cell region, the second storage electrode contact of the dummy region remaining covered by the sacrificial layer. A conductive layer is deposited within the storage electrode region to form a storage electrode contacting the first storage electrode contact of the cell region.

Abstract: A method for manufacturing semiconductor device includes forming an interlayer dielectric layer including a contact plug defined therein to electrically couple a semiconductor substrate on which a cell region and a dummy region are defined. A sacrificial layer is formed over the interlayer dielectric layer. An etch stop pattern is formed over the sacrificial layer, the etch stop pattern being vertically aligned to the dummy region. A storage electrode region through the sacrificial layer is defined to expose a first storage electrode contact of the cell region, the second storage electrode contact of the dummy region remaining covered by the sacrificial layer. A conductive layer is deposited within the storage electrode region to form a storage electrode contacting the first storage electrode contact of the cell region.

Abstract: A method of preparing optically pure (S)-3-hydroxypyrrolidine is disclosed. The present invention provides a method of economically and industrially preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising introducing an amine protecting group by using optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, reducing a carboxylic acid group into a primary alcohol, removing the amine protecting group to form an amine salt, halogenating the primary alcohol, and amine cyclization; and through a simple purification process, i.e., distillation under reduced pressure. As another method, the present invention provides a method of preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising esterifying optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, lactam cyclization, and reduction.

Abstract: A method of preparing optically pure (S)-3-hydroxypyrrolidine is disclosed. The present invention provides a method of economically and industrially preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising introducing an amine protecting group by using optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, reducing a carboxylic acid group into a primary alcohol, removing the amine protecting group to form an amine salt, halogenating the primary alcohol, and amine cyclization; and through a simple purification process, i.e., distillation under reduced pressure. As another method, the present invention provides a method of preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising esterifying optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, lactam cyclization, and reduction.