Abstract: A phase change memory with a heater with sublithographic dimensions may be achieved, in some embodiments, with lower thermal budget. The phase change memory may use a controlled etching process to reduce the lateral dimension of the heater.

Abstract: A phase change memory with a heater with sublithographic dimensions may be achieved, in some embodiments, with lower thermal budget. The phase change memory may use a controlled etching process to reduce the lateral dimension of the heater.

Abstract: A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.

Abstract: A phase change memory may be formed with a sublithographic heater by using a mask with a sidewall spacer to etch an opening in a dielectric layer. The opening then has a sublithographic lateral extent. The resulting via may be filled with a heater material to form a sublithographic heater.

Abstract: A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.

Abstract: A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.

Abstract: A phase change memory with a heater with sublithographic dimensions may be achieved, in some embodiments, with lower thermal budget. The phase change memory may use a controlled etching process to reduce the lateral dimension of the heater.

Abstract: The invention relates to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.