Patents by Inventor Jong-Wook Lim

Jong-Wook Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR CENTRIFUGAL CASTING OF MOTOR ROTOR
    Publication number: 20150343525
    Abstract: Disclosed herein is a method for centrifugal casting of a motor rotor. The method includes: assembling molds and a core; heating the assembled mold and core to a preset temperature; and forming a motor core by injecting molten metal into a forming space inside the mold and the core while rotating the assembled mold.
    Type: Application
    Filed: May 30, 2014
    Publication date: December 3, 2015
    Applicant: HYUNDAI HEAVY INDUSTRIES CO., LTD
    Inventors: Sung-Mo LEE, Kwang-Jin HAN, Ji-Hoon YOO, Jong-Wook LIM, Young-Cheol YOON
  • Semiconductor integrated circuit devices
    Patent number: 7960785
    Abstract: A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: June 14, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Don Kim, Yong-Chan Kim, Joung-Ho Kim, Mueng-Ryul Lee, Eung-Kyu Lee, Jong-Wook Lim
  • Semiconductor integrated circuit devices
    Publication number: 20090267148
    Abstract: A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.
    Type: Application
    Filed: March 19, 2009
    Publication date: October 29, 2009
    Inventors: Yong-Don Kim, Yong-Chan Kim, Joung-Ho Kim, Mueng-Ryul Lee, Eung-Kyu Lee, Jong-Wook Lim