Abstract: A semiconductor device of the present invention has an active region whose width varies. Gate electrodes cross over narrowest portions of the active region. Therefore, the device is not prone to producing leakage current even when the line width of the gate electrodes is small.

Abstract: A semiconductor device of the present invention has an active region whose width varies. Gate electrodes cross over narrowest portions of the active region. Therefore, the device is not prone to producing leakage current even when the line width of the gate electrodes is small.

Abstract: An apparatus used for detecting the endpoint or described completion point of an etching process has a detection window, an optical cable, and a bracket for fixedly holding the detection window and the optical cable with respect to each other. The detection window protrudes outwardly from a wall of a reaction chamber. The optical cable transmits light generated during an etching process from the detection window to a detecting device separate from the detection chamber. The bracket is attached to the wall of the reaction chamber so as to configure a space between the bracket and the detection window. The configuration reduces the intensity of the electric field formed between the bracket and plasma in the reaction chamber.