Patents by Inventor Jong Y. Shin

Jong Y. Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making polycrystalline silicon thin film
    Patent number: 5344796
    Abstract: A method for making a polycrystalline silicon thin film by crystallizing an amorphous silicon thin film at a low temperature of 500.degree. C. to 600.degree. C. Over a glass substrate is deposited a microcrystalline silicon seed layer having a thickness of 100 .ANG. to 500 .ANG., using the chemical vapor deposition method. Over the microcrystalline silicon seed layer, a hydrogen-containing amorphous silicon layer is formed by chemical vapor deposition, at a temperature of 180.degree. C. to 270.degree. C., which is then crystallized to form a polycrystalline silicon thin film. A hydrogen-containing amorphous silicon layer having a thickness of 300 .ANG. to 500 .ANG. may be formed over the glass substrate. In this case, the hydrogen-containing amorphous silicon layer is crystallized at a temperature of 600.degree. C., to form a polycrystaline seed layer.
    Type: Grant
    Filed: December 30, 1992
    Date of Patent: September 6, 1994
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Y. Shin, Suk B. Ma