Abstract: An integrated circuit device includes a lower electrode, a dielectric film covering the lower electrode, an upper electrode covering the dielectric film, and a multilayered interface structure between the dielectric film and the upper electrode, wherein the multilayered interface structure includes a transition metal-aluminum (Al) complex oxide layer including a transition metal oxide layer in which Al atoms are dispersed, the transition metal-Al complex oxide layer being in contact with the dielectric film, and an upper interface layer including a metal oxide or a metal oxynitride, the upper interface layer being in contact with the transition metal-Al complex oxide layer.

Abstract: An integrated circuit device comprising; a transistor on a substrate, and a capacitor structure electrically connected to the transistor. The capacitor structure includes a lower electrode, a lower interface film on the lower electrode, a capacitor dielectric film on the lower interface film, an upper interface film on the capacitor dielectric film, and an upper electrode on the upper interface film.

Abstract: A capacitor may include a primary lower electrode, an interface structure on a surface of the primary lower electrode, a primary dielectric layer including a metal oxide on the interface structure, the primary dielectric layer, and an upper electrode on the primary dielectric layer. The interface structure may include a first interface layer, a second interface layer, and a third interface layer. The first interface layer may have electrical conductivity, and may include a metal oxide doped with a pentavalent element. The second interface layer may be on the first interface layer, and may include a material further doped with nitrogen in the material of the first interface layer. The third interface layer may be on the second interface layer, and may include a metal oxide doped with nitrogen. A metal included in the metal oxide of the third interface layer may include a tetravalent metal.

Abstract: A semiconductor device may include a substrate and a capacitor on the substrate. The capacitor may include a lower electrode, a dielectric layer on the lower electrode, a first upper electrode on the dielectric layer, and a second upper electrode on the first upper electrode. The dielectric layer may include a metal oxide. The first upper electrode may include a metal nitride further including a first material having a work function of 4.8 eV or more. The second upper electrode may include the first material.

Abstract: A capacitor structure includes; a lower electrode, a dielectric pattern on the lower electrode, an interface structure on the dielectric pattern, and an upper electrode on the interface structure. The dielectric pattern includes an oxide of a metal having 4 valence electrons. The interface structure includes a first interface pattern including a first metal oxide doped with nitrogen, and a second interface including a second metal oxide.

Abstract: An integrated circuit device may include a plurality of lower electrodes above a substrate, a supporter between the plurality of lower electrodes, an upper electrode on the plurality of lower electrodes, and a capacitor dielectric film between the upper electrode and the plurality of lower electrodes. The supporter may include one of a metal oxide, a metal nitride, and a metal oxynitride. A portion of the capacitor dielectric film may include a dopant. The dopant in the portion of the capacitor dielectric film and a metal in the supporter may be a same metal.

Abstract: A method of manufacturing an integrated circuit device may include forming a plurality of lower electrodes above a substrate, forming a supporter configured to support the plurality of lower electrodes, forming a dielectric film on the plurality of lower electrodes and the supporter, and forming an upper electrode on the dielectric film. The dielectric film may include a lower leakage current prevention layer on an outer surface of each of the plurality of lower electrodes and an outer surface of the supporter, a first capacitor material layer on the lower leakage current prevention layer, an upper material layer on the first capacitor material layer, and a second capacitor material layer on the upper material layer.