Abstract: A location of contact with a touch sensitive device is determined. Values associated with each electrode of a plurality of electrodes formed on a single layer of the touch sensitive device are sampled. A determination is made as to whether a contact with the touch sensitive device has occurred. Values sampled subsequent to the contact are adjusted based on selected stored sampled values. A location of contact is then determined based on the adjusted values.

Abstract: A location of contact with a touch sensitive device is determined. Values associated with each electrode of a plurality of electrodes formed on a single layer of the touch sensitive device are sampled. A determination is made as to whether a contact with the touch sensitive device has occurred. Values sampled subsequent to the contact are adjusted based on selected stored sampled values. A location of contact is then determined based on the adjusted values.

Abstract: Provided is a fast handover method using candidate care-of addresses (CoAs). The method includes obtaining Internet protocol (IP) address information of access routers located adjacent to a previous access router (PAR) to which a mobile node is connected; setting more than one candidate CoAs based on the IP address information; and selecting from the more than one candidate CoAs a CoA of a sub-net to which the mobile node is to move and performing a handover based on the selected CoA. Therefore, a delay and a packet loss caused by the setting of a new NCoAs can be prevented.

Abstract: The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier (SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal.

Abstract: Barrier lines are formed on a substrate to define column areas between adjacent barrier lines. A color filter is then formed using continuous ink ejection in at least one of the column areas.

Abstract: The present invention relates to a fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. In more detail, it relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 ?m wavelength. The present invention presents a method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+-InGaAs on the third cladding layer.