Abstract: A method of manufacturing a MIM capacitor of a semiconductor device and a MIM capacitor. A MIM structure and a metal layer may be formed using a single process. A method of manufacturing a MIM capacitor may include forming a hole on and/or over a lower metal wire region. A method of manufacturing a MIM capacitor may include forming a lower metal layer, an inter-metal dielectric and/or an upper metal layer on and/or over a hole to form a MIM structure. Patterns to form a MIM structure and a metal layer may be formed at substantially the same time. If etching is performed with a photoresist pattern as a mask, a MIM structure and a metal layer structure may be formed at substantially the same time using a single mask.

Abstract: A MIM capacitor may include a plurality of lower electrodes over a semiconductor substrate. A plurality of insulators may be formed over the lower electrodes, with each insulator having a thickness which is different from the thickness of at least one other insulator among the plurality of insulators. Upper electrodes may be formed over the plurality of insulators. This arrangement permits a plurality of MIM capacitors having differing capacitance values to be formed on a semiconductor substrate, enabling the MIM capacitors to be applied to devices or chips which have various characteristics.

Abstract: A method of manufacturing a MIM capacitor of a semiconductor device and a MIM capacitor. A MIM structure and a metal layer may be formed using a single process. A method of manufacturing a MIM capacitor may include forming a hole on and/or over a lower metal wire region. A method of manufacturing a MIM capacitor may include forming a lower metal layer, an inter-metal dielectric and/or an upper metal layer on and/or over a hole to form a MIM structure. Patterns to form a MIM structure and a metal layer may be formed at substantially the same time. If etching is performed with a photoresist pattern as a mask, a MIM structure and a metal layer structure may be formed at substantially the same time using a single mask.

Abstract: A semiconductor device and fabricating method thereof are disclosed. The present invention includes an insulating layer on a semiconductor substrate, a contact plug in and protruding from the insulating layer, and a capacitor on the insulating layer and the exposed contact plug, having a dome shape.

Abstract: Disclosed are a metal insulator metal (MIM) capacitor and a method of manufacturing a MIM capacitor. The MIM capacitor includes a lower metal interconnection layer, a dielectric layer pattern formed on the lower metal interconnection layer, and a third metal layer pattern formed on the dielectric layer pattern. The dielectric layer pattern has a concave surface that can be formed by performing an isotropic etching process. Accordingly, the third metal layer pattern fills the concave surface, resulting in a larger surface contact area between the dielectric material and the metal material of the MIM capacitor.