Abstract: A cover glass printing pad, a method of manufacturing the cover glass and the cover glass are provided. The cover glass printing pad includes a jig portion, a body portion in which a first surface contacts the jig portion and at least a part of a second surface is parallel to the first surface and a pad portion including an outer frame portion disposed on at least one side of the body portion and protruding in a first direction perpendicular to the second surface.

Abstract: Disclosed is a frequency mixer. The frequency mixer includes a first matching circuit that generates a matched local oscillator (LO) signal based on an LO signal, a non-linear circuit that generates a non-linear LO signal based on the matched LO signal, a second matching circuit that generates a matched radio frequency (RF) signal based on an RF signal, a mixing circuit that generates a mixed signal based on a mixing of the non-linear LO signal and the matched RF signal, a third matching circuit that generates an intermediate frequency (IF) signal based on the mixed signal, wherein the non-linear circuit includes a non-linear transistor, a bias transistor, and an internal matching circuit connected in series.

Abstract: Disclosed is a frequency mixer. The frequency mixer includes a first matching circuit that generates a matched local oscillator (LO) signal based on an LO signal, a non-linear circuit that generates a non-linear LO signal based on the matched LO signal, a second matching circuit that generates a matched radio frequency (RF) signal based on an RF signal, a mixing circuit that generates a mixed signal based on a mixing of the non-linear LO signal and the matched RF signal, a third matching circuit that generates an intermediate frequency (IF) signal based on the mixed signal, wherein the non-linear circuit includes a non-linear transistor, a bias transistor, and an internal matching circuit connected in series.

Abstract: A method for detecting a radionuclide using energy spectrum data represented by a count depending on energy obtained from a radiation detector, including: calculating a count ratio for a particular energy value using a background energy spectrum data measured without a target object to detect the radionuclide and a target energy spectrum measured in the presence of the target object; and comparing a background count ratio and a target object count ratio, where the count ratio is a ratio of a low count sum of count values which is an energy value or less divided by a high count sum of the count values which is greater than the particular energy value, or a ratio of the low count sum of the count values which is smaller than the particular energy value divided by the high count sum of the count values which is the particular energy value or greater.

Abstract: Provided is a method of evaluating a performance of a suspended channel plasma wave device (PWD) to evaluate a terahertz emission possibility of the suspended channel PWD based on physical properties of the suspended channel PWD. The method includes an x-axis setting operation of setting an electron drift velocity to be an x-axis; a y-axis setting operation of setting a plasma wave velocity to be a y-axis; and a device performance determining operation of determining an operation of a device by generating a design window based on a plasma wave generation condition of the suspended channel PWD and a relational expression between the plasma wave velocity and the electron drift velocity.

Abstract: A method for detecting a radionuclide using energy spectrum data represented by a count depending on energy obtained from a radiation detector, including: calculating a count ratio for a particular energy value using a background energy spectrum data measured without a target object to detect the radionuclide and a target energy spectrum measured in the presence of the target object; and comparing a background count ratio and a target object count ratio, where the count ratio is a ratio of a low count sum of count values which is an energy value or less divided by a high count sum of the count values which is greater than the particular energy value, or a ratio of the low count sum of the count values which is smaller than the particular energy value divided by the high count sum of the count values which is the particular energy value or greater.

Abstract: Disclosed is a power switching module for a battery module assembly in which a plurality of rectangular battery modules, each having a plurality of battery cells or unit modules connected in series to each other, are stacked in the width (longitudinal) and height (transverse) direction by at least twos such that the battery modules constitute a hexahedral structure (hexahedral stack), outer edges of the hexahedral stack are fixed by a frame member, and input and output terminals of the battery modules are oriented such that the input and output terminals of the battery modules are directed toward one surface (a) of the stack, wherein the power switching module comprises an insulative substrate mounted to the surface (a) of the stack, elements mounted on the substrate for controlling voltage and current during charge and discharge of the battery modules, and connection members mounted on the substrate for interconnecting the control elements.

Abstract: Disclosed herein is a battery module assembly configured to have a structure in which a plurality of rectangular battery modules, each of which has two or more battery cells or unit modules connected in series and/or in parallel to each other, are stacked by two or more in a width direction (a longitudinal direction) thereof and in a height direction (a transverse direction) thereof so that the rectangular battery modules generally constitute a hexahedral structure (a hexahedral stack), outer edges of the hexahedral stack are fixed by a frame member, and coupling parts for mounting, through which the battery module assembly is mounted to an external device, are provided at one side of the frame member.

Abstract: Provided is a method of evaluating a performance of a suspended channel plasma wave device (PWD) to evaluate a terahertz emission possibility of the suspended channel PWD based on physical properties of the suspended channel PWD. The method includes an x-axis setting operation of setting an electron drift velocity to be an x-axis; a y-axis setting operation of setting a plasma wave velocity to be a y-axis; and a device performance determining operation of determining an operation of a device by generating a design window based on a plasma wave generation condition of the suspended channel PWD and a relational expression between the plasma wave velocity and the electron drift velocity.

Abstract: A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.

Abstract: Aspects of the present invention relate to a method for manufacturing a high-performance and low-power field effect transistor (FET) element of which surface roughness scattering is minimized or removed, comprising: a first step of etching a strained silicon substrate into a pin structure; a second step of stacking undoped SiGe thereon; a third step of etching the undoped SiGe; a fourth step of etching after performing lithography; a fifth step of stacking doped SiGe thereon; a sixth step of etching the doped SiGe after performing lithography; and a step of forming a transistor element by sequentially stacking an oxide and a gate metal on the doped SiGe and there is an effect of enabling the implementation of a Fin HEMT capable of having all of good channel controllability and a high on-current, which are advantages of a FinFET, and high electron mobility, which is an advantage of an HEMT.

Abstract: Aspects of the present invention relate to a method for manufacturing a high-performance and low-power field effect transistor (FET) element of which surface roughness scattering is minimized or removed, comprising: a first step of etching a strained silicon substrate into a pin structure; a second step of stacking undoped SiGe thereon; a third step of etching the undoped SiGe; a fourth step of etching after performing lithography; a fifth step of stacking doped SiGe thereon; a sixth step of etching the doped SiGe after performing lithography; and a step of forming a transistor element by sequentially stacking an oxide and a gate metal on the doped SiGe and there is an effect of enabling the implementation of a Fin HEMT capable of having all of good channel controllability and a high on-current, which are advantages of a FinFET, and high electron mobility, which is an advantage of an HEMT.

Abstract: Disclosed herein is a middle- or large-sized battery module comprising a plurality of stacked unit cells, each unit module including two or more plate-shaped battery cells electrically connected with each other, each battery cell having electrode terminals formed at opposite sides thereof. The battery module is manufactured by connecting electrode terminals of a pair of unit modules by welding, mounting a sensing unit, including a sensing member, to the welding part and bending the welding part such that the unit modules are stacked, and repeatedly performing the above processes until all the unit cells are stacked.

Abstract: A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.

Abstract: Systems, methods, and media for connecting emergency communications are provided.

Abstract: A system includes one or more devices connected to or within one of a group of emergency services networks. The one or more devices may generate a text message that includes information identifying a user device, information identifying a geographic location of the user device, and information identifying a particular emergency services network of the group of emergency services networks; establish, based on the text message, a text-based communication session between the user device and a call taker device within the particular emergency services network; store session information regarding the text-based communication session; receive a subsequent text message; and transmit the subsequent text message to the call taker device based on the session information.

Abstract: Systems, methods, and media for connecting emergency communications are provided.

Abstract: Systems, methods, and media for connecting emergency communications are provided.

Abstract: A system includes one or more devices connected to or within one of a group of emergency services networks. The one or more devices may generate a text message that includes information identifying a user device, information identifying a geographic location of the user device, and information identifying a particular emergency services network of the group of emergency services networks; establish, based on the text message, a text-based communication session between the user device and a call taker device within the particular emergency services network; store session information regarding the text-based communication session; receive a subsequent text message; and transmit the subsequent text message to the call taker device based on the session information.

Abstract: Disclosed herein is a battery module assembly configured to have a structure in which a plurality of rectangular battery modules, each of which has two or more battery cells or unit modules connected in series and/or in parallel to each other, are stacked by two or more in a width direction (a longitudinal direction) thereof and in a height direction (a transverse direction) thereof so that the rectangular battery modules generally constitute a hexahedral structure (a hexahedral stack), outer edges of the hexahedral stack are fixed by a frame member, and coupling parts for mounting, through which the battery module assembly is mounted to an external device, are provided at one side of the frame member.