Abstract: A semiconductor device includes a bonding pad on a semiconductor substrate, a bump on the bonding pad, a solder on the bump, and an anti-wetting layer between the bump and the solder extending along a sidewall of the bump, the anti-wetting layer having a first thickness T1 along the sidewall of the bump closer to the solder and a second thickness T2 along the sidewall of the bump closer to the bonding pad, wherein T2<T1.

Abstract: A bump structure includes a first bump and a second bump. The first bump is disposed on a connection pad of a substrate. The first bump includes a lower portion having a first width, a middle portion having a second width smaller than the first width, and an upper portion having a third width greater than the second width. The second bump is disposed on the upper portion of the first bump.

Abstract: A semiconductor device includes a bonding pad on a semiconductor substrate, a bump on the bonding pad, a solder on the bump, and an anti-wetting layer between the bump and the solder extending along a sidewall of the bump, the anti-wetting layer having a first thickness T1 along the sidewall of the bump closer to the solder and a second thickness T2 along the sidewall of the bump closer to the bonding pad, wherein T2<T1.

Abstract: A bump structure includes a first bump and a second bump. The first bump is disposed on a connection pad of a substrate. The first bump includes a lower portion having a first width, a middle portion having a second width smaller than the first width, and an upper portion having a third width greater than the second width. The second bump is disposed on the upper portion of the first bump.

Abstract: A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.

Abstract: A method of packaging a semiconductor device may include providing a semiconductor substrate including first and second spaced apart semiconductor chip areas, and adhering a cover on the first and second spaced apart semiconductor chip areas of the semiconductor substrate. A scribe line may be formed through the semiconductor substrate between the first and second semiconductor chip areas with a semiconductor bridge pattern remaining connected between the first and second spaced apart semiconductor chip areas after forming the scribe line. The cover and the semiconductor bridge pattern may then be cut after forming the scribe line.

Abstract: A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.

Abstract: A method of packaging a semiconductor device may include providing a semiconductor substrate including first and second spaced apart semiconductor chip areas, and adhering a cover on the first and second spaced apart semiconductor chip areas of the semiconductor substrate. A scribe line may be formed through the semiconductor substrate between the first and second semiconductor chip areas with a semiconductor bridge pattern remaining connected between the first and second spaced apart semiconductor chip areas after forming the scribe line. The cover and the semiconductor bridge pattern may then be cut after forming the scribe line.