Abstract: The present invention relates to an ESS control device based on transient stability state and a method thereof, the an ESS control device based on transient stability state according to an embodiment of the present invention including an input unit receiving phase angle information from a power system; a calculation unit calculating a change rate in the phase angle of the power system using the phase angle information; a determination unit determining the transient stability state of the power system by comparing the change rate of the phase angle with a predetermined threshold; and a control unit performing control so that an energy storage system (ESS) installed in a power generation stage is switched to a charging mode according to the determination result.

Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

Abstract: The present invention relates to an ESS control device based on transient stability state and a method thereof, the an ESS control device based on transient stability state according to an embodiment of the present invention including an input unit receiving phase angle information from a power system; a calculation unit calculating a change rate in the phase angle of the power system using the phase angle information; a determination unit determining the transient stability state of the power system by comparing the change rate of the phase angle with a predetermined threshold; and a control unit performing control so that an energy storage system (ESS) installed in a power generation stage is switched to a charging mode according to the determination result.

Abstract: An apparatus for validating integrity of metadata in a standard file includes: a metadata acquiring unit for acquiring metadata from a protected file; an integrity evidence value acquiring unit for acquiring an integrity evidence value from a file or a database; a secret information extracting unit for extracting secret information of a file data; and a metadata integrity validating unit for checking if the metadata is correct by using the acquired metadata, the acquired integrity evidence value, and the extracted secret information.

Abstract: In one example embodiment, a system may include a device configured to: receive a first user input to identify at least a portion of video content at a point in the play time of the video content, transmit the identified portion of the video content to a text recognition server, receive, from the text recognition server, at least one word that is detected from the identified video content, display the at least one received word, receive a second user input to select one of the displayed at least one word, and transmit a request to search for information regarding the selected word; and the text recognition server configured to: receive, from the device, the identified portion of the video content, retrieve the at least one word displayed on the video content at the point in the play time of the video content, and transmit, to the device, the at least one word.

Abstract: An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

Abstract: An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about ?70° to about +70°.

Abstract: An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

Abstract: In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.

Abstract: An inspection apparatus and a method for detecting defects in a substrate having a semiconductor device thereon are provided. The method includes establishing a first inspection region including first patterns repeatedly formed in a first direction and a second inspection region including second patterns repeatedly formed in a second direction on the substrate, determining a first unit inspection size of the first inspection region and a second unit inspection size of the second inspection region, obtaining images of the first and second patterns by moving the substrate in the first direction, and detecting defects in the first and second inspection regions by comparing the obtained images of portions of the first and second inspection regions, respectively, with each other. The first inspection size and second inspection size function as comparison units if defects are detected. The substrate may face an image receiving member.

Abstract: In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.

Abstract: In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.

Abstract: An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions.

Abstract: An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about ?70° to about +70°.

Abstract: A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.

Abstract: An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about ?70° to about +70°.

Abstract: An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions.

Abstract: An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.

Abstract: An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about ?70° to about +70°.