Abstract: A method of manufacturing a forksheet field-effect transistor (FSFET) includes exposing a stack of alternating silicon layers and silicon-germanium (SiGe) layers in source/drain regions of the FSFET between a pair of outer spacers; selectively removing the SiGe layers in the source/drain regions of the FSFET to form voids; depositing an insulator in the voids previously occupied by the SiGe layers; and partially etching the insulator. A portion of the insulator remains between each of the silicon layers following the partially etching. The method also includes partially etching the silicon layers. A residual portion of the silicon layers remains following the partially etching. The method also includes laterally epitaxially growing the source/drain regions of the FSFET from the residual portion of silicon layers. The residual portion of the silicon layers is a seed for the laterally epitaxially growing the source/drain regions.

Abstract: A system for reconstructing wafer maps of semiconductor wafers includes: a processor; and memory having instructions stored thereon that, when executed by the processor, cause the processor to: receive test data of a wafer at sparse sampling locations of the wafer, the sparse sampling locations being selected based on a probing mask; and compute a reconstructed wafer map by performing compressed sensing with Zernike polynomials on the test data at sparse locations of the wafer.

Abstract: A system for reconstructing wafer maps of semiconductor wafers includes: a processor; and memory having instructions stored thereon that, when executed by the processor, cause the processor to: receive test data of a wafer at sparse sampling locations of the wafer, the sparse sampling locations being selected based on a probing mask; and compute a reconstructed wafer map by performing compressed sensing with Zernike polynomials on the test data at sparse locations of the wafer.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes, a gate structure having a gate dielectric layer, a gate electrode, and a spacer, which are each formed on a substrate, a first impurity area formed in a portion of the substrate located below the spacer, a second impurity area in contact with a sidewall of the first impurity area and formed in the substrate on both sides of the gate structure, and a dielectric pattern in contact with a portion of the first impurity area and formed on a sidewall of the second impurity area. At this time, the second impurity area may include an upper part with an upward-narrowing width and a lower part with a downward-narrowing width.

Abstract: A powder suitable for the manufacture of a filling mass for bakery products comprising 15 to 25 parts of potato granules, 3 to 5 parts of fat, 3 to 6.5 parts of thickening agents and optionally 45 to 58 parts of sugar.