Abstract: A manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.

Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: A manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.

Abstract: A portable golf swing exerciser includes: a main body of a shaft shape; a head shaft including a head, and one or more connection shafts, of which one end is detachably coupled to the head, and the other end is detachably coupled to a front end of the main body; and an antenna stick guide extended from or retracted into a rear end of the main body in a form of an antenna having multiple sections.

Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: A portable golf swing exerciser includes: a main body of a shaft shape; a head shaft including a head, and one or more connection shafts, of which one end is detachably coupled to the head, and the other end is detachably coupled to a front end of the main body; and an antenna stick guide extended from or retracted into a rear end of the main body in a form of an antenna having multiple sections.

Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.

Abstract: Disclosed is a technology designed to prevent obstacles from getting caught in a fishing needle by covering the fishing needle using a weedless guard, and more particularly, to a weedless fishing needle including: needle covers in which wires formed of a plasticity material and having one fixed end are arranged to be expanded at a predetermined angle; and a fixture integrally formed with the fixed end of the needle covers and coupled to a fishing needle neck, wherein the fixture is coupled to the fishing needle neck of the fishing needle so as to be detachably inserted into the fishing needle neck, in which the fixture is formed of a flexible material and has a tubular or O-ring shape, and the needle cover includes needle covers arranged side by side, and is disposed to cover a periphery of a hook of the fishing needle.

Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The present invention relates to an auto focus control apparatus and a continuous auto focus control method. In accordance with an embodiment of the present invention, an auto focus control apparatus including: a focal value calculation unit for calculating a focal value from a signal of an image frame; a focus lens driving unit for moving a focus lens to a desired position; and a control unit for determining position movement of a subject based on the focal value calculated by the focal value calculation unit, executing pre-scan according to the movement of the focus lens by controlling the focus lens driving unit to move the focus lens at set frame intervals when the position of the subject is moved, and skipping a lens moving frame corresponding to the time when the focus lens moves during the pre-scan is provided.

Abstract: A nonvolatile resistive switching memory (ReRAM) device having no selection device is provided. The ReRAM device includes a lower electrode that is formed on on a substrate; a metal oxide layer that is formed on the lower electrode, the metal oxide layer having a resistive switching characteristic; an upper electrode that is formed on the metal oxide layer; and a tunnel barrier oxide film that is formed between the lower electrode and the metal oxide layer, thereby forming a double oxide film structure, the tunnel barrier oxide film being made of a material, a band energy gap and a conduction band offset of which are lower than those of the metal oxide layer, and which does not cause interface switching.

Abstract: The present invention relates to an auto focus control apparatus and a continuous auto focus control method. In accordance with an embodiment of the present invention, an auto focus control apparatus including: a focal value calculation unit for calculating a focal value from a signal of an image frame; a focus lens driving unit for moving a focus lens to a desired position; and a control unit for determining position movement of a subject based on the focal value calculated by the focal value calculation unit, executing pre-scan according to the movement of the focus lens by controlling the focus lens driving unit to move the focus lens at set frame intervals when the position of the subject is moved, and skipping a lens moving frame corresponding to the time when the focus lens moves during the pre-scan is provided.

Abstract: Disclosed herein is a metal surface treatment solution that can provide superior corrosion resistance and paint adhesion. The metal surface treatment solution includes 9˜13 wt % of an epoxy-based silane coupling agent, 5˜9 wt % of an amino-based silane coupling agent, 0.5˜1 wt % of a vanadium compound, 0.5˜1 wt % phosphoric acid; 0.5˜1 wt % of an organic acid, 0.1˜10 wt % of a Ti-Alkoxide, 0.1˜2 wt % of a chelating agent, 0.1˜5 wt % of a calcium phosphate-based compound,. 0.2˜10 wt % of a colloidal silica, and the balance of solvents. A method of manufacturing a surface treated steel sheet using the same is also disclosed.

Abstract: Disclosed herein is a metal surface treatment solution that can provide superior corrosion resistance and paint adhesion and method for treating the surface of a steel sheet using the metal surface treatment solution. The metal surface treatment solution includes 9˜13 wt % of an epoxy-based silane coupling agent, 5˜9 wt % of an amino-based silane coupling agent, 0.5˜1 wt % of a vanadium compound, 0.5˜1 wt % phosphoric acid; 0.5˜1 wt % of an organic acid, 0.1˜10 wt % of a Ti-Alkoxide, 0.1˜2 wt % of a chelating agent, 0.1˜5 wt % of a calcium phosphate-based compound, 0.2˜10 wt % of a colloidal silica, and the balance of solvents.