Abstract: A manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.

Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Abstract: A portable golf swing exerciser includes: a main body of a shaft shape; a head shaft including a head, and one or more connection shafts, of which one end is detachably coupled to the head, and the other end is detachably coupled to a front end of the main body; and an antenna stick guide extended from or retracted into a rear end of the main body in a form of an antenna having multiple sections.

Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Abstract: A portable golf swing exerciser includes: a main body of a shaft shape; a head shaft including a head, and one or more connection shafts, of which one end is detachably coupled to the head, and the other end is detachably coupled to a front end of the main body; and an antenna stick guide extended from or retracted into a rear end of the main body in a form of an antenna having multiple sections.

Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.

Abstract: Disclosed is a technology designed to prevent obstacles from getting caught in a fishing needle by covering the fishing needle using a weedless guard, and more particularly, to a weedless fishing needle including: needle covers in which wires formed of a plasticity material and having one fixed end are arranged to be expanded at a predetermined angle; and a fixture integrally formed with the fixed end of the needle covers and coupled to a fishing needle neck, wherein the fixture is coupled to the fishing needle neck of the fishing needle so as to be detachably inserted into the fishing needle neck, in which the fixture is formed of a flexible material and has a tubular or O-ring shape, and the needle cover includes needle covers arranged side by side, and is disposed to cover a periphery of a hook of the fishing needle.

Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.

Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Abstract: Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching layer interposed between the first and second electrodes, and a first amorphous semiconductor layer interposed between the first electrode and the switching layer.

Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first and second internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on an external surface of the ceramic body, wherein the dielectric layer contains a barium titanate-based powder particle having a core-shell structure including a core and a shell around the core, the shell having a structure in which titanium is partially substituted with an element having the same oxidation number as that of the titanium in the barium titanate-based powder particle and having an ionic radius different from that of the titanium in the barium titanate-based powder particle, and the shell covers at least 30% of a surface of the core.