Abstract: A system and method for managing a tractor-trailer and a method are provided. The system includes: a control server to manage a position of a trailer, identification information on the trailer, and identification information on a tractor matched to the trailer with respect to each hub; a trailer to authenticate the tractor by comparing the identification information, which is received from the control server, on the tractor, with identification information received from the tractor, and to release an electronic parking brake (EPB) when an authentication result for the tractor is correct; and a tractor to authenticate the trailer by comparing the identification information, which is received from the control server, on the trailer with identification information received from the trailer to authenticate the trailer, and to be coupled to the trailer, when an authentication result for the trailer is correct.

Abstract: A multilayer capacitor includes a capacitor body including dielectric layers and internal electrodes alternately disposed with the dielectric layers interposed therebetween; and an external electrode disposed on the capacitor body to be connected to one or more of the internal electrodes. Porosity of ends of the internal electrodes is less than 50% on an interfacial surface between a margin of the capacitor body in a width direction the capacitor body and the internal electrodes.

Abstract: An electrified vehicle includes: a battery; a motor drive device configured to drive a motor through an inverter, based on a voltage of the battery; and a battery controller configured to determine whether to perform output limiting on the battery, based on whether a ratio of regenerative braking is less than or equal to a preset ratio, wherein the ratio of regenerative braking is varied according to an amount of charging of the battery and an amount of discharging of the battery within a preset time interval, and adjust, based on the output limiting being performed on the battery, a derate ratio associated with a battery output limit value.

Abstract: Provided is a fluorine-doped tin oxide support, a platinum catalyst for a fuel cell having the same, and a method for producing the same. Also described is a high electrical conductivity and electrochemical durability by doping fluorine to the tin oxide-based support through an electrospinning process. Thus, while resolving a degradation issue of the carbon support in the conventional commercially available platinum/carbon (Pt/C) catalyst, what is designed is to minimize an electrochemical elution of dopant or tin, which is a limitation of the tin oxide support itself and has excellent performance as a catalyst for a fuel cell.

Abstract: According to an embodiment of the present disclosure, a content container is provided. The content container may include: a container part configured to accommodate a liquid content; an upper cap that is detachably coupled to the container part and includes a first accommodation part configured to accommodate a solid content and a pressing part moved by being pressed; and a lower cap that is inserted into the container part, and includes an accommodation tube forming a second accommodation part and a plurality of communication holes formed in the outside of the accommodation tube to communicate with the container part, wherein, by pressing the upper cap, the solid content is moved from the first accommodation part to the second accommodation part.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: The present invention relates to an auxiliary wheel for a lawn mower which includes an installation unit coupled to a main body of a lawn mower, a swing unit coupled to the installation unit to be swingable in one direction or the other direction, a wheel unit connected to the swing unit to be swingable with the swing unit, and a fixing unit installed on an outer portion of the installation unit and configured to fix the swing unit to be swingable in the other direction. When the wheel unit swings in the one direction, the main body is pressed against the ground, and when the wheel unit swings in the other direction, the main body is spaced apart from the ground.

Abstract: A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Abstract: The present invention relates to an auxiliary wheel for a lawn mower which includes an installation unit coupled to a main body of a lawn mower, a swing unit coupled to the installation unit to be swingable in one direction or the other direction, a wheel unit connected to the swing unit to be swingable with the swing unit, and a fixing unit installed on an outer portion of the installation unit and configured to fix the swing unit to be swingable in the other direction. When the wheel unit swings in the one direction, the main body is pressed against the ground, and when the wheel unit swings in the other direction, the main body is spaced apart from the ground.

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

Abstract: An ice maker and a water purifier capable of making ice using two water trays. The water purifier having an ice maker includes a water tray member comprising an ice-making water tray holding ice-making raw water to make ice using an ice-making unit, and an auxiliary water tray holding ice-making raw water remaining in the ice-making water tray in the course of cooling the ice-making raw water by means of the ice-making unit and removing the ice-making raw water from the ice-making water tray; an ice reservoir storing ice made in the ice-making unit; a cold water storage tank cooling water held therein using the ice made in the ice-making unit; and a guide member guiding the ice made in the ice-making unit so that the ice is selectively fed to either the ice reservoir or the cold water storage tank.