Patents by Inventor Jonghoon Baek
Jonghoon Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908662Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.Type: GrantFiled: October 24, 2019Date of Patent: February 20, 2024Assignee: Applied Materials, Inc.Inventors: Xiaopu Li, Kallol Bera, Edward P. Hammond, IV, Jonghoon Baek, Amit Kumar Bansal, Jun Ma, Satoru Kobayashi
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Publication number: 20240030305Abstract: The present disclosure provides for semiconductor devices including field effect transistors. In some embodiments, the semiconductor device includes active structures extending in a first direction on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending in a second direction across the active structures, a cutting insulation pattern formed between end portions of the gate structures in the second direction, and a lower impurity region at an upper portion of the isolation pattern. A first shape of a lower portion of the cutting insulation pattern disposed under an uppermost surface of the isolation pattern is different from a second shape of a lower portion of the gate structures disposed under the uppermost surface of the isolation pattern. The gate structures are formed on the active structures and the isolation pattern. The lower impurity region contacts at least a portion of the cutting insulation pattern.Type: ApplicationFiled: May 18, 2023Publication date: January 25, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jaehyun LEE, Jonghan LEE, Jonghoon BAEK, Taegon KIM, Yujin JUNG
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Publication number: 20220406914Abstract: A semiconductor device includes an active fin protruding from a substrate; a plurality of channel layers on the active fin and spaced apart from each other in a vertical direction; a gate pattern intersecting the active fin and the plurality of channel layers; and source/drain regions on recessed regions of the active fin on both sides of the gate pattern. The gate pattern includes a gate dielectric layer, inner conductive layers, and a conductive liner. The inner conductive layers are disposed between the plurality of channel layers, and between the active fin and a lowermost channel layer among the plurality of channel layers. The conductive liner has a first thickness on an upper surface of an uppermost channel layer in the vertical direction, and at least one of the inner conductive layers have a second thickness in the vertical direction. The first thickness is less than the second thickness.Type: ApplicationFiled: March 10, 2022Publication date: December 22, 2022Inventors: JAEHYUN LEE, JONGHAN LEE, HYUNGKOO KANG, JONGHOON BAEK
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Publication number: 20220179328Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.Type: ApplicationFiled: February 25, 2022Publication date: June 9, 2022Inventors: Chunguang Xia, Jonghoon Baek, John Tom Stewart, IV, Andrew David LaForge, Deniz Van Heijnsbergen, David Robert Evans, Nina Vladimirovna Dziomkina, Yue Ma
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Patent number: 11347154Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.Type: GrantFiled: February 12, 2019Date of Patent: May 31, 2022Assignee: ASML Netherlands B.V.Inventors: Chunguang Xia, Jonghoon Baek, John Tom Stewart, IV, Andrew David LaForge, Deniz Van Heijnsbergen, David Robert Evans, Nina Vladimirovna Dziomkina, Yue Ma
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Patent number: 11339475Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: GrantFiled: November 8, 2019Date of Patent: May 24, 2022Assignee: Applied Materials, Inc.Inventors: Xinhai Han, Deenesh Padhi, Daemian Raj Benjamin Raj, Kristopher Enslow, Wenjiao Wang, Masaki Ogata, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Gregory Eugene Chichkanoff, Shailendra Srivastava, Jonghoon Baek, Zakaria Ibrahimi, Juan Carlos Rocha-Alvarez, Tza-Jing Gung
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Patent number: 11264482Abstract: A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.Type: GrantFiled: September 17, 2019Date of Patent: March 1, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghyun Kim, Inhyun Song, Yeongmin Jeon, Sejin Park, Juyun Park, Jonghoon Baek, Taeyeon Shin, Sooyeon Jeong
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Publication number: 20210166915Abstract: The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.Type: ApplicationFiled: February 28, 2019Publication date: June 3, 2021Inventors: Edward P. HAMMOND, IV, Jonghoon BAEK
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Patent number: 11013096Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: GrantFiled: October 7, 2019Date of Patent: May 18, 2021Assignee: ASML Nettherlands B.V.Inventors: Jonghoon Baek, Mathew Cheeran Abraham, David Robert Evans, Jack Michael Gazza
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Publication number: 20210063899Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.Type: ApplicationFiled: February 12, 2019Publication date: March 4, 2021Inventors: Chunguang Xia, Jonghoon Baek, John Tom Stewart, IV, Andrew David LaForge, Deniz Van Heijnsbergen, David Robert Evans, Nina Vladimirovna Dziomkina, Yue MA
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Publication number: 20200343364Abstract: A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.Type: ApplicationFiled: September 17, 2019Publication date: October 29, 2020Inventors: Donghyun KIM, Inhyun SONG, Yeongmin JEON, Sejin PARK, Juyun PARK, Jonghoon BAEK, Taeyeon SHIN, Sooyeon JEONG
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Publication number: 20200173022Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: ApplicationFiled: November 8, 2019Publication date: June 4, 2020Inventors: Xinhai HAN, Deenesh PADHI, Daemian Raj BENJAMIN RAJ, Kristopher ENSLOW, Wenjiao WANG, Masaki OGATA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Jonghoon BAEK, Zakaria IBRAHIMI, Juan Carlos ROCHA-ALVAREZ, Tza-Jing GUNG
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Publication number: 20200161093Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.Type: ApplicationFiled: October 24, 2019Publication date: May 21, 2020Inventors: Xiaopu LI, Kallol BERA, Edward P. HAMMOND, IV, Jonghoon BAEK, Amit Kumar BANSAL, Jun MA, Satoru KOBAYASHI
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Publication number: 20200037428Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: ApplicationFiled: October 7, 2019Publication date: January 30, 2020Inventors: Jonghoon BAEK, Mathew Cheeran ABRAHAM, David Robert EVANS, Jack Michael GAZZA
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Patent number: 10504697Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.Type: GrantFiled: February 3, 2017Date of Patent: December 10, 2019Assignee: Applied Materials, Inc.Inventors: Jonghoon Baek, Soonam Park, Xinglong Chen, Dmitry Lubomirsky
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Patent number: 10477662Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: GrantFiled: June 7, 2019Date of Patent: November 12, 2019Assignee: ASML NETHERLANDS B.V.Inventors: Jonghoon Baek, Mathew Cheeran Abraham, David Robert Evans, Jack Michael Gazza
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Publication number: 20190289704Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: ApplicationFiled: June 7, 2019Publication date: September 19, 2019Inventors: Jonghoon BAEK, Mathew Cheeran ABRAHAM, David Robert EVANS, Jack Michael GAZZA
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Patent number: 10362664Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: GrantFiled: February 2, 2018Date of Patent: July 23, 2019Assignee: ASML Netherlands B.V.Inventors: Jonghoon Baek, Mathew Cheeran Abraham, David Robert Evans, Jack Michael Gazza
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Patent number: 10032606Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.Type: GrantFiled: June 20, 2016Date of Patent: July 24, 2018Assignee: Applied Materials, Inc.Inventors: Jang-Gyoo Yang, Xinglong Chen, Soonam Park, Jonghoon Baek, Saurabh Garg, Shankar Venkataraman
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Publication number: 20180160517Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.Type: ApplicationFiled: February 2, 2018Publication date: June 7, 2018Inventors: Jonghoon Baek, Mathew Cheeran Abraham, David Robert Evans, Jack Michael Gazza