Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to determine that a block of the blocks is an open block based on an open block information, and in response to the block of the blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to determine that a block of the blocks is an open block based on an open block information, and in response to the block of the blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to, in response to a block of the plurality of blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to, in response to a block of the plurality of blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: A cooling apparatus according to an embodiment of the present invention may comprise: a chamber member to which a cooling fluid is supplied from the outside; a discharge member, provided in the chamber member, for discharging the cooling fluid inside the chamber unit; and a resistance member, provided in an inlet portion of the chamber member, for inhibiting an initial flow of the cooling fluid supplied into the chamber member.

Abstract: A straightening system is provided to perform straightening in conformity with a shape pattern of a the material. The straightening system includes a cooling device configured to spray a cooling fluid in a predetermined pattern with respect to a plurality of regions of the material, divided in a width direction, to cool the material that is heated in a heating furnace and then passes through a rolling mill. The straightening system also includes a straightening device configured to straighten the material passed through the cooling device. The straightening system further includes a flatness measuring system configured to measure flatness of the material passed through the cooling device and a controller configured to receive data of the flatness of the material from the flatness measuring system and to control the cooling device in response to the data to enhance the flatness of the material.

Abstract: The present invention relates to a cooling device and a cooling method capable of controlling, by section, the flow of coolant supplied in a widthwise direction, the cooling device comprising: a base frame connected to an external cooling fluid supply line, and disposed to be able to spray coolant onto a material that passes through a rolling mill after having been heated in a heating furnace; and a nozzle assembly disposed on the base frame, and spraying a cooling fluid in an arbitrary pattern onto a plurality of sections divided along the widthwise direction of the material to minimize a deviation in temperature in the widthwise direction of the material. Through this configuration, the flow of coolant supplied in the widthwise direction of a material can be controlled to be varied, thereby being capable of minimizing a deviation in temperature in the widthwise direction of a high temperature material.

Abstract: A cooling system according to an embodiment of the present invention may comprise: a cooling part which supplies a cooling fluid to a strip; and a boiling film removal part, which physically comes into contact with the strip and removes a boiling film formed by the cooling fluid. The boiling film removal part according to the embodiment may be disposed at a position where a nuclear boiling and a film boiling are mixed together along a widthwise direction of the strip.

Abstract: The present invention relates to a cooling device and a cooling method capable of controlling, by section, the flow of coolant supplied in a widthwise direction, the cooling device comprising: a base frame connected to an external cooling fluid supply line, and disposed to be able to spray coolant onto a material that passes through a rolling mill after having been heated in a heating furnace; and a nozzle assembly disposed on the base frame, and spraying a cooling fluid in an arbitrary pattern onto a plurality of sections divided along the widthwise direction of the material to minimize a deviation in temperature in the widthwise direction of the material. Through this configuration, the flow of coolant supplied in the widthwise direction of a material can be controlled to be varied, thereby being capable of minimizing a deviation in temperature in the widthwise direction of a high temperature material.

Abstract: A straightening system and a straightening method are provided to perform straightening in conformity with the shape pattern of a material, the straightening system comprising: a cooling device configured to spray a cooling fluid in a predetermined pattern with respect to a plurality of regions of a material, divided in a width direction, to cool the material that is heated in a heating furnace and then passes through a rolling mill; a straightening device configured to straighten the material passed through the cooling device; a flatness measuring system configured to measure flatness of the material passed through the cooling device; and a controller configured to receive data of the flatness of the material from the flatness measuring system and to control the cooling device in response to the data to enhance the flatness of the material.

Abstract: According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.

Abstract: A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.

Abstract: A recessed channel array transistor may include a substrate, a gate oxide layer, a gate electrode and source/drain regions. The substrate may have an active region and an isolation region. A recess may be formed in the active region. The gate oxide layer may be formed on the recess and the substrate. The gate oxide layer may include a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess. The first portion may include a thickness greater than about 70% of a thickness of the second portion. The gate electrode may be formed on the gate oxide layer. The source/drain regions may be formed in the substrate. Thus, the recessed channel array transistor may have a decreased leakage current and an increased on-current.

Abstract: A fin type active pattern is formed on a substrate. The fin type active pattern projects from the substrate. A diffusion film is formed on the fin type active pattern. The diffusion film includes an impurity. The impurity is diffused into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer.

Abstract: A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.

Abstract: An alignment mark is formed on a substrate including a first region and a second region. The alignment mark is formed in the second region. An etch target layer including a crystalline material is formed on the alignment mark and the substrate. The etch target layer in the first region is partially amorphized. The amorphized etch target layer is etched to form an opening.

Abstract: According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract: Disclosed herein is an apparatus and method for forming a product having an asymmetric cross-section using a ring rolling process. The method of forming a product having an asymmetric cross-section uses a ring rolling process that uses a ring rolling apparatus, the ring rolling apparatus comprising: a main roll pressing a circumferential outer surface of a blank, a pressure roll pressing a circumferential inner surface of the blank, and a pair of axial rolls pressing upper and lower surfaces of the blank, wherein a protrusion provided on the pressure roll comes into contact with a depressed portion formed on the circumferential inner surface of the blank, and as a width of the blank varies, the pressure roll moves in a vertical direction.

Abstract: Disclosed herein is a method of manufacturing a flange for wind towers through a ring rolling process. The ring rolling process makes use of a ring rolling machine. The ring rolling machine includes a main roll which presses a circumferential outer surface of a blank, a pressure roll which presses a circumferential inner surface of the blank, and a pair of axial rolls which press upper and lower surfaces of the blank. The method includes expanding an inner diameter and outer diameter of the blank using the ring rolling machine, transferring the pressure roll vertically so that a protrusion provided on a circumferential outer surface of the pressure roll comes into contact with the circumferential inner surface of the blank, and forming a depression in the circumferential inner surface of the blank using the protrusion of the pressure roll.