Abstract: An embodiment provides a latch circuit which outputs, to a digital analog converter (DAC), a digital signal including grayscale data, the latch circuit including a first latch configured to store the digital signal and a second latch configured to output the digital signal by controlling first timing at which a level of a first signal included in the digital signal becomes an enable level, based on a center grayscale. The grayscale data includes first grayscale data and second grayscale data.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A silicon carbide powder including carbon; and silicon, wherein a flow index under a major principal consolidation stress of 9 kPa is 0.005 to 0.3, and a flow index under a major principal consolidation stress of 0.3 kPa is 0.01 to 0.5.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A silicon carbide powder including carbon; silicon; and an oxide film having a thickness of 0.1 nm to 10 nm is provided.

Abstract: A silicon carbide powder having silicon carbide particles including carbon and silicon, wherein a mass ratio of silicon carbide particles having a particle diameter of less than 50 ?m after sonication is 10 Wt % or less.

Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

Abstract: A pad assembly for power reception of an electric vehicle includes a receiving pad configured to support a receiving coil connected to an external component, and a magnetic complex layer disposed above or below the receiving coil. An increment in inductance per unit density of the magnetic complex layer disposed above or below the receiving coil is 25%·cm3/g or more compared to an increment in inductance per unit density of the magnetic complex layer alone not disposed above or below the receiving coil.

Abstract: The present disclosure relates to a data drive circuit capable of increasing clock and data recovery stability by generating a clock synchronized with input data, a clock recovery method thereof, and a display drive device having the same, and the data drive circuit according to an aspect includes a receiver including a clock and data recovery part configured to recover a test data pattern from input data using an internal clock, and a data comparator configured to compare the recovered test data pattern with a predetermined reference data pattern to generate a control signal according to a degree of asynchronicity between the recovered test data pattern and the reference data pattern, wherein the clock and data recovery part recovers a clock synchronized with the input data according to the control signal, and recovers control information and image data from the input data using the recovered clock.

Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Abstract: An embodiment provides a latch circuit which outputs, to a digital analog converter (DAC), a digital signal including grayscale data, the latch circuit including a first latch configured to store the digital signal and a second latch configured to output the digital signal by controlling first timing at which a level of a first signal included in the digital signal becomes an enable level, based on a center grayscale. The grayscale data includes first grayscale data and second grayscale data.

Abstract: Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.

Abstract: Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.

Abstract: Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within ?1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.

Abstract: A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.

Abstract: The present embodiment relates to a technology for driving a display device, and provides a technology in which a pixel driving device determines whether or not an overcurrent flows through a driving voltage line, and, if it is determined that an overcurrent flows therethrough, controls pixel data or an analog voltage output to a pixel so as to reduce a driving current.

Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.