Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

Abstract: An image sensor may include: a pixel array in which a plurality of pixels are arranged in a matrix, including a first pixel and a second pixel disposed adjacent to each other, each of the plurality of pixels includes: at least one photoelectric conversion device; at least one floating diffusion region to which charges of the at least one photoelectric conversion device are configured to be transferred; a reset transistor configured to transfer a voltage at a reset node to the at least one floating diffusion region; a source follower transistor having one end connected to a pixel voltage node and configured to output a sampling voltage corresponding to charges of the at least one floating diffusion region; and a select transistor having one end connected to the source follower transistor and configured to output the sampling voltage to an output node.

Abstract: An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

Abstract: An image sensor includes a first semiconductor chip including a first semiconductor substrate including a plurality of pixels and a first wiring structure having a first bonding pad; a second semiconductor chip including a second semiconductor substrate having pixel signal generator circuits, a second wiring structure on the second semiconductor substrate and having an upper bonding pad bonded to the first bonding pad, a back side insulating layer on a lower surface of the second semiconductor substrate and including a shielding metal pattern buried therein, and a conductive through-via penetrating the back side insulating layer and the first semiconductor substrate, and a third semiconductor chip including a bonding layer having a lower bonding pad connected to the conductive through via, a third semiconductor substrate including logic devices, and a third wiring structure having a third bonding pad bonded to the lower bonding pad.

Abstract: The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.

Abstract: An image sensor having a structure in which a light-blocking film having an excellent light-blocking effect is provided in a light-blocking region includes a first substrate including a first surface and a second surface, the first surface including a plurality of transistors, and the second surface being opposite to the first surface and configured to receive light, the first substrate comprising a pixel array region and a light-blocking region, an anti-reflection structure on the second surface of the first substrate in the pixel array region and the light-blocking region, and a light-blocking structure on the anti-reflection structure in the light-blocking region, wherein the light-blocking structure comprises a plurality of film that are sequentially stacked, the plurality of film including at least a first conductive film, a first insulating film, and a second conductive film.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor includes a substrate including an active region with source and drain regions, a source follower gate pattern on the active region, the drain and source regions being adjacent to first and second side surfaces of the source follower gate pattern, respectively, and a gate insulating layer between the active region and the source follower gate pattern. An upper portion of the active region includes a recess region, and the source follower gate pattern includes a body portion on the active region and a buried portion provided in the recess region and protruding below the body portion. A distance between the first and second side surfaces is a first length, and a distance between a center of the buried portion and the first side surface is a second length. The second length is greater than or equal to 0.1 times the first length and is less than 0.5 times the first length.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Semiconductor devices may include an active fin extending on a substrate in a first direction and including a recess opening both sides located in the first direction, a source region and a drain region respectively adjacent opposing ends of the active fin, a gate electrode traversing the active fin in the second direction, perpendicular to the first direction, on an upper surface of the recess of the active fin, and extending to a side region, adjacent to the recess, and a gate insulating layer between the active fin and the gate electrode. In some embodiments, the first recess may extend through the first active fin in a width direction thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Provided herein are methods and devices for measuring pH and for amplifying a pH signal to obtain ultrasensitive detection of changes in pH. This is achieved by providing a sensor and a transducer, wherein the sensor transconductance is sensitive to changes in pH and the transducer transconductance is not affected by pH change. The transducer instead compensates for changes in the sensor transconductance arising from pH change. The unique configuration of the sensor and transducer with respect to each other provides substantial increases in a pH amplification factor, thereby providing pH sensing devices with a giant Nernst response and, therefore, effectively increased pH sensitivity.