Abstract: The present invention relates to a light irradiation apparatus including: a body part, base parts coupled to the body part, light irradiators coupled to the corresponding base part to irradiate light on a user's body, and position adjustors for adjusting the light irradiators in position and having one or more actuators controlled by a computing device, wherein the one or more actuators adjust the light irradiators in position so that the positions of the light irradiators correspond to the user's body on which the light is irradiated.

Abstract: The present invention relates to an integrated connector and a heat exchanger including the same, in which a connector main body is formed by pressing one pipe, a cap is press-fitted into the connector main body, such that the integrated connector is formed so that an interior of the connector main body is blocked by the cap. Therefore, the number of components used to manufacture a connector, which connects and securely couples a header tank and a gas-liquid separator, may be reduced, the integrated connector may be easily manufactured, and a brazing defect may be reduced at portions where the integrated connector is joined to the header tank and the gas-liquid separator of the heat exchanger.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A multilayer capacitor includes a capacitor body including dielectric layers and internal electrodes alternately disposed with the dielectric layers interposed therebetween; and an external electrode disposed on the capacitor body to be connected to one or more of the internal electrodes. Porosity of ends of the internal electrodes is less than 50% on an interfacial surface between a margin of the capacitor body in a width direction the capacitor body and the internal electrodes.

Abstract: According to the present invention, an adaptive scheme is applied to an image encoding apparatus that includes an inter-predictor, an intra-predictor, a transformer, a quantizer, an inverse quantizer, and an inverse transformer, wherein input images are classified into two or more different categories, and two or more modules from among the inter-predictor, the intra-predictor, the transformer, the quantizer, and the inverse quantizer are implemented to perform respective operations in different schemes according to the category to which an input image belongs. Thus, the invention has the advantage of efficiently encoding an image without the loss of important information as compared to a conventional image encoding apparatus which adopts a packaged scheme.

Abstract: A light device including a substrate, and first and second light emitters spaced apart from each other, and a power source to control the first light emitter and the second light emitter, in which the first and second light emitters include a light emitting region, a wavelength conversion layer disposed on the light emitting region, and a lateral reflection layer covering a region of a side of the light emitting region and the wavelength conversion layer, the first light emitter and the second light emitter are configured to output the same or different magnitudes of power by receiving the same or different magnitudes of current, the first and second light emitters are respectively configured to emit first light and second light, the first light emitter is electrically connected to the second light emitter through a common electrode.

Abstract: Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer.

Abstract: Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: Provided are a method and apparatus for stopping power supply to a radio frequency identification (RFID) system. The apparatus includes: a power supplier supplying power to a high RFID tag; an input unit rectifying and boosting an input predetermined frequency band signal and outputting a direct-current (DC) voltage signal; a wake-up determiner comparing a voltage of the DC voltage signal output from the input unit with a predetermined reference voltage and outputting a HIGH signal or a LOW signal; and a switch stopping power supply to the high RFID tag if the wake-up determiner outputs the LOW signal.

Abstract: Provided is an automatic cleaner, which includes a first moving part, a second moving part, a moving wheel, a driving motor, a fixing member, and a control part. The first moving part is movably disposed at a side of an object to be cleaned. The second moving part is movably disposed at another side of the object. The moving wheel is disposed on at least one of the first moving part and the second moving part. The driving motor provides driving force to the moving wheel. The fixing member fixes the first moving part and the second moving part to each other through the object. The control part increases or decreases the driving force output from the driving motor according to a moving direction of the first or second moving part.

Abstract: Provided are an apparatus and method for efficiently computing a log likelihood ratio (LLR) using the maximum a posteriori (MAP) algorithm known as block combining. The method includes the steps of: calculating alpha values, beta values and gamma values of at least two time sections; calculating transition probabilities of respective states in the at least two time sections; performing a comparison operation for some of the transition probabilities to determine the highest value, selecting one of the other transition probabilities according to the determined high value, comparing the determined value with the selected value to select the higher value, and thereby obtaining the highest of the transition probabilities; and determining an operation to apply according to the highest transition probability and calculating an LLR.

Abstract: Provided are a radio frequency identification (RFID) tag and a wake-up method thereof. The RFID tag includes: a power source that supplies a driving voltage; a continuous wave detector that receives the driving voltage from the power supply so as to detect a continuous wave in a signal received from an RFID tag reader; a command detector that selectively receives the driving voltage and detects a command in the signal; and a controller that executes the command detected by the command detector by supplying the driving voltage to the command detector if the continuous wave is detected, and stops the driving voltage from being supplied to the command detector if no command is received from the command detector for a predetermined time period.

Abstract: Provided is a turbo decoder with a variable scaling factor. The decoding convergence degree of the turbo decoder is evaluated using a sign difference ratio (SDR) value, the iterative-decoding number is limited, a variable scaling factor is calculated and applied in each decoding convergence area based on the SDR value, and the average number of decoding iterations is reduced.

Abstract: Provided is a substrate for a liquid crystal display which is resistant to deformation. The substrate includes a flexible substrate, first and second barrier layers respectively disposed on first and second surfaces of the flexible substrate, and first and second hard coating layers respectively disposed on the first and second barrier layers.

Abstract: Provided is a substrate for a liquid crystal display which is resistant to deformation. The substrate includes a flexible substrate, first and second barrier layers respectively disposed on first and second surfaces of the flexible substrate, and first and second hard coating layers respectively disposed on the first and second barrier layers.